Results 121 to 130 of about 28,299 (286)
HeliyonLinearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junction ...
Bhaskar Awadhiya +6 more
doaj +1 more source
Electronics Letters, 1996 A linear self-biasing MOS transconductance amplifier is presented. A linear V-I transfer characteristic is obtained by square-rooting the drain current of a MOS transistor in the saturation region. The main advantage of the circuit is that its transconductance gain and input linear range can be adjusted independently. Simulation results are included to
J. Mahattanakul, C. Toumazou
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Advanced Electronic Materials, EarlyView.Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source
Generalised Impedance Converters with only Transconductance Elements and Grounded Capacitors
Active and Passive Electronic Components, 2002 Novel generalised impedance converters are presented, which use only transconductance elements and/or grounded capacitors for the realisation of a wide variety of immittance functions.
Iqbal A. Khan +2 more
doaj +1 more source
Novel Floating General Element Simulators Using CBTA [PDF]
, 2012 In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed.
Ayten, Umut Engin +3 more
core +1 more source
Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact
, 2014 We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman
Chesi, Stefano +8 more
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A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET [PDF]
, 2020 Hind Jaafar +2 more
openalex +1 more source
Advanced Energy and Sustainability Research, EarlyView.Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar +2 more
wiley +1 more source
Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor [PDF]
, 2008 We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-
Chen, Yu +4 more
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