Results 101 to 110 of about 10,610 (248)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Linear CMOS transconductance element for VHF filters [PDF]

, 1989
A differential transconductance element based on CMOS inverters is presented. With this circuit a linear, tunable integrator for very high-frequency continuous-time integrated filters can be made.
Seevinck, E., Nauta, Bram
core   +1 more source

On the Design of a Class of Analog Filters Whose Impulse Response Is a Mittag‐Leffler Function

International Journal of Circuit Theory and Applications, EarlyView.
Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known forms are summarized in this work. Simulation results using Cadence and experimental results using an FPAA validate the introduced concept. ABSTRACT Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known
Julia Nako, Costas Psychalinos, Ahmed S. Elwakil, Brent J. Maundy   +3 more
wiley   +1 more source

Independent control of transconductance gain andinput linear range in a MOS linear transconductance amplifier

Electronics Letters, 1996
A linear self-biasing MOS transconductance amplifier is presented. A linear V-I transfer characteristic is obtained by square-rooting the drain current of a MOS transistor in the saturation region. The main advantage of the circuit is that its transconductance gain and input linear range can be adjusted independently. Simulation results are included to
J. Mahattanakul, C. Toumazou
openaire   +1 more source

Subthreshold Time‐Mode All‐Digital DLL With Built‐In Linearization

International Journal of Circuit Theory and Applications, EarlyView.
This paper presents a subthreshold time‐mode all‐digital delay‐locked loop (DLL) for low‐frequency clock generation. The large and tunable delay of the DLL is obtained using a static inverter delay line whose supply voltage is in the vicinity of 100 mV and adjustable by varying supply voltage. Phase error is processed by a time‐mode proportional block (
Fei Yuan, Wenhao Wu, Yushi Zhou
wiley   +1 more source

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

High-transconductance stretchable transistors achieved by controlled gold microcrack morphology [PDF]

, 2019
High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of ...
Changjin Wan, Kang, Jiheong, Insang You, Liu, Zhiyuon, Helen Tran, You, Insang, Chen, Xiaodong, Geng Chen, Liu, Zhiyuan, Wu, Hung-Chin, Chen, Geng, Naoji Matsuhisa, Kim, Yeongin, Zhiyuan Liu, Yeongin Kim, Bao, Zhenan, Zhenan Bao, Xiaodong Chen, Jiheong Kang, Jiang, Ying, Wan, Changjin, Tran, Helen, Ying Jiang, Matsuhisa, Naoji, Matsuhisa, Nooji, Hung‐Chin Wu   +25 more
core   +1 more source

Material design strategies for flexible n‐type polymer semiconductors

FlexMat, EarlyView.
This Perspective surveys recent progress in flexible n‐type polymer semiconductors, emphasizing the interplay between molecular design and microstructure control. It outlines strategies including backbone and side‐chain engineering, multilevel microstructure optimization, to maintain charge‐transport pathways under mechanical deformation.
Xiao‐Yan Zhang, Yang‐Yang Zhou, Jie‐Yu Wang, Jian Pei, Ze‐Fan Yao   +4 more
wiley   +1 more source

Digitally Programmable Integrator and Differentiator

Active and Passive Electronic Components, 1995
Digitally programmable integrator and differentiator circuits are presented. Each circuit uses at most one operational amplifier, two operational transconductance amplifiers, and one capacitor.
Abdulrahman Khalaf Al-Ali, Muhammad Taher Abuelma'atti, Syed Yunus   +2 more
doaj   +1 more source