Results 11 to 20 of about 12,767 (271)
Design of Low Voltage Quasi-floating Self Cascode Current Mirror
U.Porto Journal of Engineering, 2021 In this paper, a modified structure of self-cascode structure is proposed. In the proposed structure, the MOSFET working in saturation mode is replaced by a Quasi-floating gate MOSFET by which the threshold voltage can be scaled, resulting in an increase
P. Anil, S. Tamil, N. Raj
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Microscopic Theory of Transconductivity [PDF]
VLSI Design, 1998 Measurements of momentum transfer between two closely spaced mesoscopic electronic systems, which couple via Coulomb interaction but where tunneling is inhibited, have proven to be a fruitful method of extracting information about interactions in mesoscopic systems.
Antti-Pekka Jauho +4 more
openaire +2 more sources
Wafer-Scale 3D Integration for High-Density Multi-Valued Neuromorphic Logic. [PDF]
Adv Sci (Weinh)Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Kim CH +5 more
europepmc +2 more sources
Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier
U.Porto Journal of Engineering, 2021 In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input.
Rajesh Durgam, S. Tamil, Nikhil Raj
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Nanomaterials, 2023 2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties.
Kamoladdin Saidov +6 more
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Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm [PDF]
, 2007 We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date.
Moran, D.A.J. +12 more
core +1 more source
Technologies, 2021 A low-cost 1 kHz–400 kHz operating frequency fully-active electrode bioimpedance measurement module, based on Howland current source, is presented in this paper.
Christos Dimas +5 more
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1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]
, 2008 The first demonstration of implant-free, flatband-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J. +12 more
core +1 more source
Analog Integrated Current Drivers for Bioimpedance Applications: A Review
Sensors, 2019 An important component in bioimpedance measurements is the current driver, which can operate over a wide range of impedance and frequency. This paper provides a review of integrated circuit analog current drivers which have been developed in the last 10 ...
Nazanin Neshatvar +3 more
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