Results 31 to 40 of about 12,767 (271)

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Micromachines, 2023
In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao   +10 more
doaj   +1 more source

Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier [PDF]

, 2022
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low
Nikhil Raj, Bharti Chourasia, Raj, Nikhil, Rajesh Durgam, Tamil, Subramanian, Subramanian Tami, Rajesh, Durgam, Chourasia, Bharti   +7 more
core   +1 more source

Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

IEEE Access, 2019
In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi, Chitrakant Sahu, Jawar Singh   +2 more
doaj   +1 more source

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al2O3 as Gate Dielectric [PDF]

, 2011
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. A 0.75-mu m-gate-length device has a maximum drain current of 70 mA/mm, a transconductance of 26 mS/mm, and a hole inversion mobility of 200 cm(2)/V
Min Xu, Xu, Min, Wang, Runsheng, Peide D. Ye, Runsheng Wang, Ye, Peide D.   +5 more
core   +1 more source

Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

IEEE Journal of the Electron Devices Society, 2015
An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey, William A. Stapleton, Ivan Sutanto   +2 more
doaj   +1 more source

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

, 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao, Enchao Peng, Cuimei Wang, Peng, EC, Lijuan Jiang, Xiaoliang Wang, Qu, SQ, Chun Feng, Kang, H, He Kang, Wang, ZG, Shenqi Qu, Wang, CM, Yin, HB, Xun Hou, Hou, X, Jiang, LJ, Xiao, HL, Hong Chen, Wang, XL, Feng, C, Chen, H, Haibo Yin, Zhanguo Wang   +23 more
core   +1 more source

Improved drive current in RF vertical MOSFETS using hydrogen anneal [PDF]

, 2011
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications.
Tan, L., Redman-White, W., Ashburn, P., Hall, S., M. M. A. Hakim, Abuelgasim, A., L. Tan, W. Redman-White, de Groot, C.H., C. H. de Groot, Hakim, M.M.A., A. Abuelgasim, S. Hall, P. Ashburn   +13 more
core   +1 more source

Channel length effects on the performance of vOECTs

Materials Research Express
Channel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen, Baining Tao, Dan Zhao, Yixin Zhou, Yueheng Zhong, Sihui Hou, Liang-Wen Feng, Jianhua Chen, Gang Wang, Wei Huang   +9 more
doaj   +1 more source

A Wide Linear Range Ultra-low Transconductance Amplifier for Biomedical Sensor Applications

, 2023
In the field of biomedical sensors, active filters with very low cutoff frequencies are required because of the weak electrical signals from the human body.
Wu, Ruihuang, Liu, Jingjing, Feng, Yan, Sun, Haoning, Li, Zhipeng, Huang, Yuxuan, He, Jin, Wei, Yiqun   +7 more
core   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source