Results 221 to 230 of about 25,830 (234)

A transconductive graphene pressure sensor

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013
We present a graphene pressure transducer consisting of an array of suspended circular graphene membranes over 3μm diameter holes in silicon dioxide on degenerately doped silicon. The transconductive nature of graphene allows the change in pressure to be translated into a change in resistance across the suspended graphene membranes.
A. M. Hurst, S. Lee, N. Petrone, J. VanDeWeert, A. M. van der Zande, J. Hone   +5 more
openaire   +1 more source

Operational Transconductance Amplifiers (OTAs)

2014
This chapter describes operational transconductance amplifiers (OTAs) and their linearization for use in g m -C filters. Super-source-follower and digitally programmable OTAs are detailed. The common-mode feedback used in these OTAs and a buffer amplifier are described. A OTA implemented in 120 nm CMOS is introduced inclusive measured results.
Heimo Uhrmann, Robert Kolm, Horst Zimmermann   +2 more
openaire   +1 more source

Low distortion CMOS transconductance amplifier

International Journal of Electronics, 2000
A novel low distortion CMOS linearized transconductor circuit is developed for analogue signal processing. The circuit gives a very low distortion level and a wide linearity range when compared with other reported topologies. Simulation results based on using the 0.5 µm CMOS process show that this approach gives an exceptional linearity and an ...
A. M. Ismail, A. M. Soliman
openaire   +1 more source

Transconductance degradation in VLSI devices

Solid-State Electronics, 1985
Abstract Experimental results from small geometry VLSI devices show that as devices are scaled, transconductance degradation occurs. This results from scaling either the length or width. A model using a mobility expression developed by Wang is used to predict transconductance in small MOS devices.
Lex A. Akers, Mary Holly, Jenny M. Ford
openaire   +1 more source

Ultra low voltage transconductance amplifier

1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), 2002
In this paper we propose a novel design of an ultra low-voltage amplifier using FGUVMOS transistors. Both formal and simulated results confirm a tanh transfer function, using capacitive division for dynamic range scaling, giving rail-to-rail operation.
T.S. Lande, Y. Berg
openaire   +1 more source

High transconductance Al0.3Ga0.7As/GaAs MODFETs

Microelectronic Engineering, 1990
Abstract Bulk and planar doped 0.2μm gate length Al0.3Ga0.7As/GaAs MODFETs have been fabricated by using a three step e-beam lithography process. The DC electric measurements of the planar doped MODFETs demonstrate peak extrinsic transconductances as high as 625mS/mm.
Y. Jin, B. Etienne, F. Pardo, G. Faini, H. Launois   +4 more
openaire   +1 more source

Transconductance properties of plasmas

IRE Transactions on Antennas and Propagation, 1962
Radio-frequency effects arising from motions of the electrons and ions in plasmas are reviewed. Starting with cases of simple straight line orbits, the relationship between theory and experiment is cited in regard to wave dispersion, damping, amplification, and radiation. Circular and spiral orbits as well as linear and drifting-linear vibration orbits
openaire   +1 more source

Operational Transconductance Amplifiers

1999
Chi-Hung Lin, Mohammed Ismail, R Wassenaar   +2 more
openaire   +2 more sources

transconductance, n.

2023
openaire   +1 more source

Transconductance efficiency

Proceedings of the IEEE, 1976
openaire   +1 more source