Results 221 to 230 of about 26,266 (261)
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SPIE Proceedings, 1987
Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length.
G. Ebert, A. Colquhoun
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Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length.
G. Ebert, A. Colquhoun
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Transconductance boosting of OTA
2018 International Conference on Advances in Computing, Communication Control and Networking (ICACCCN), 2018In this work, a novel method for improving the transconductance of a two-stage operational transconductance amplifier (OTA) has been presented. It is proposed to use Cascading technique to magnify the transconductance of OTA. All the circuits in work have been simulated using Cadence virtuoso and designed in 180nm technology. Performance examination of
Nimeesha Rani, Vandana Niranjan
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Wireless Personal Communications, 2021
Two new structures of current differencing transconductance amplifier (CDTA) for high transconductance gains are proposed. Usually, the transconductance gain of conventional CDTA is controlled by varying the bias current which limits the transconductance gain up to a certain extent and increases the power dissipation.
Raviraj Kour +2 more
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Two new structures of current differencing transconductance amplifier (CDTA) for high transconductance gains are proposed. Usually, the transconductance gain of conventional CDTA is controlled by varying the bias current which limits the transconductance gain up to a certain extent and increases the power dissipation.
Raviraj Kour +2 more
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Low-IF complex filter with transconductance networks
2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004Low-IF technique for implementing transconductance networks (T-networks) in low-IF complex-filter is developed and a system solution for low-IF complex-filter with T-networks is also proposed in this paper. By implementing the T-networks in active-RC complex-filters, an area efficient solution for complex-filter design is presented in this paper ...
Chao Yang, Theng-Tee Yeo, Masaaki Itoh
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Operational Transconductance Amplifiers
2023The foremost chapter gives the topic context of electrocardiography (ECG or EKG), a diagnostic procedure used to evaluate the heart's rhythm and record electrical Activity for different heart conditions. The electrical signal has three main components: P wave, QRS complex, and T wave.
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On a new topology for the transconductance feedback amplifier
IEEE Transactions on Circuits and Systems I: Regular Papers, 2005A new topology for a transconductance feedback amplifier (TFA) is presented in this paper. The topology offers the advantage that it is capable of realizing the negative of the standard inverting gain expression. That is, gains of the form +R/sub 2//R/sub 1/.
Brent Maundy +2 more
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High-Transconductance Ingaas/Inaias Sisfets
[1991] 49th Annual Device Research Conference Digest, 1991Summary form only given. SISFETs in the InGaAs/InAlAs lattice-matched-to-InP material system with record transconductance have been fabricated. These devices use an InGaAs channel layer grown on an InAlAs buffer layer grown on (and lattice matched to) a semi-insulating InP substrate.
T.N. Jackson +7 more
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Transconductance amplifier with low-power consumption
IEEE Transactions on Circuits and Systems II: Express Briefs, 2005A modified transconductance amplifier with low harmonic distortion and high current efficiency is proposed. It can be used in high-frequency applications up to 10 MHz. Each half of the transconductor differential input stage consists of a pair of transistors in saturation and linear regimes with a voltage feedback loop.
Dmitry V. Morozov, Alexander S. Korotkov
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Ultra low voltage transconductance amplifier
1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), 2002In this paper we propose a novel design of an ultra low-voltage amplifier using FGUVMOS transistors. Both formal and simulated results confirm a tanh transfer function, using capacitive division for dynamic range scaling, giving rail-to-rail operation.
Tor Sverre Lande, Yngvar Berg
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Transconductance properties of plasmas
IRE Transactions on Antennas and Propagation, 1962Radio-frequency effects arising from motions of the electrons and ions in plasmas are reviewed. Starting with cases of simple straight line orbits, the relationship between theory and experiment is cited in regard to wave dispersion, damping, amplification, and radiation. Circular and spiral orbits as well as linear and drifting-linear vibration orbits
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