Results 271 to 280 of about 28,299 (286)
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Transconductance-based CMOS analog multiplier
2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference, 2008In this paper we propose a four-quadrant multiplier based on a core cell that exploits the relationship between the saturation current of an MOS transistor and the source transconductance. The advantages of the proposed topology are simplicity and feasibility of low-power and low-voltage operation.
Marcelo Bender Machado +3 more
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Transconductance of electron tubes
Electrical Engineering, 1949ALL OF the functions of an electron tube when used as an amplifier, modulator, frequency doubler, or rectifier, can be formulated in terms of a plate-current-grid-voltage (i-e) characteristic expressed as the sum of constant, linear, and square terms in e.
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A transconductive graphene pressure sensor
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013We present a graphene pressure transducer consisting of an array of suspended circular graphene membranes over 3μm diameter holes in silicon dioxide on degenerately doped silicon. The transconductive nature of graphene allows the change in pressure to be translated into a change in resistance across the suspended graphene membranes.
A. M. Hurst +5 more
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Operational Transconductance Amplifiers (OTAs)
2014This chapter describes operational transconductance amplifiers (OTAs) and their linearization for use in g m -C filters. Super-source-follower and digitally programmable OTAs are detailed. The common-mode feedback used in these OTAs and a buffer amplifier are described. A OTA implemented in 120 nm CMOS is introduced inclusive measured results.
Heimo Uhrmann +2 more
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Low distortion CMOS transconductance amplifier
International Journal of Electronics, 2000A novel low distortion CMOS linearized transconductor circuit is developed for analogue signal processing. The circuit gives a very low distortion level and a wide linearity range when compared with other reported topologies. Simulation results based on using the 0.5 µm CMOS process show that this approach gives an exceptional linearity and an ...
A. M. Ismail, A. M. Soliman
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Transconductance degradation in VLSI devices
Solid-State Electronics, 1985Abstract Experimental results from small geometry VLSI devices show that as devices are scaled, transconductance degradation occurs. This results from scaling either the length or width. A model using a mobility expression developed by Wang is used to predict transconductance in small MOS devices.
Lex A. Akers, Mary Holly, Jenny M. Ford
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Ultra low voltage transconductance amplifier
1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), 2002In this paper we propose a novel design of an ultra low-voltage amplifier using FGUVMOS transistors. Both formal and simulated results confirm a tanh transfer function, using capacitive division for dynamic range scaling, giving rail-to-rail operation.
T.S. Lande, Y. Berg
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High transconductance Al0.3Ga0.7As/GaAs MODFETs
Microelectronic Engineering, 1990Abstract Bulk and planar doped 0.2μm gate length Al0.3Ga0.7As/GaAs MODFETs have been fabricated by using a three step e-beam lithography process. The DC electric measurements of the planar doped MODFETs demonstrate peak extrinsic transconductances as high as 625mS/mm.
Y. Jin +4 more
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Transconductance properties of plasmas
IRE Transactions on Antennas and Propagation, 1962Radio-frequency effects arising from motions of the electrons and ions in plasmas are reviewed. Starting with cases of simple straight line orbits, the relationship between theory and experiment is cited in regard to wave dispersion, damping, amplification, and radiation. Circular and spiral orbits as well as linear and drifting-linear vibration orbits
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