Results 21 to 30 of about 10,610 (248)
Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
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Nanomaterials, 2022 Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors.
Songyou Zhang +4 more
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Microscopic Theory of Transconductivity [PDF]
VLSI Design, 1998 Measurements of momentum transfer between two closely spaced mesoscopic electronic systems, which couple via Coulomb interaction but where tunneling is inhibited, have proven to be a fruitful method of extracting information about interactions in mesoscopic systems.
Antti-Pekka Jauho +4 more
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Nanomaterials, 2023 2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties.
Kamoladdin Saidov +6 more
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Technologies, 2021 A low-cost 1 kHz–400 kHz operating frequency fully-active electrode bioimpedance measurement module, based on Howland current source, is presented in this paper.
Christos Dimas +5 more
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Engineering and Applied Science Research, 2020 To improve the transconductance of operational transconductance amplifier (OTA), various architectures namely recycling folded cascode (RFC), Improved recycling folded cascode (IRFC), modified recycling folded cascode (MRFC) and high recycling folded ...
Sudheer Raja Venishetty +1 more
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Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm [PDF]
, 2007 We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date.
Moran, D.A.J. +12 more
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Low-voltage organic transistors with high transconductance [PDF]
, 2020 This thesis presents the development of low-voltage organic thin-film transistors with high transconductance. This was achieved by employing ultra-thin bi-layer gate dielectric consisting of aluminium oxide (AlOx) and a self-assembled monolayer of ...
Al Ruzaiqi, Afra Salim Mohamed
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1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]
, 2008 The first demonstration of implant-free, flatband-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J. +12 more
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Design of Low Voltage Quasi-floating Self Cascode Current Mirror
U.Porto Journal of Engineering, 2021 In this paper, a modified structure of self-cascode structure is proposed. In the proposed structure, the MOSFET working in saturation mode is replaced by a Quasi-floating gate MOSFET by which the threshold voltage can be scaled, resulting in an increase
P. Anil, S. Tamil, N. Raj
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