Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer [PDF]
, 2014 A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao +23 more
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A Wide Linear Range Ultra-low Transconductance Amplifier for Biomedical Sensor Applications [PDF]
, 2023 In the field of biomedical sensors, active filters with very low cutoff frequencies are required because of the weak electrical signals from the human body.
Wu, Ruihuang +7 more
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Advances on CMOS Folded-Cascode Operational Transconductance [PDF]
AUT Journal of Electrical Engineering, 2022 In this paper, a tutorial review on several structural improvements of the CMOS folded-cascode Operational Transconductance Amplifier (OTA) is presented. After a brief discussion on the structure and operation of the conventional Folded-Cascode Amplifier,
Mohammad Yavari
doaj +1 more source
Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier [PDF]
, 2022 A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low
Nikhil Raj +7 more
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Analog Integrated Current Drivers for Bioimpedance Applications: A Review
Sensors, 2019 An important component in bioimpedance measurements is the current driver, which can operate over a wide range of impedance and frequency. This paper provides a review of integrated circuit analog current drivers which have been developed in the last 10 ...
Nazanin Neshatvar +3 more
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Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
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A Complementary Recycling Operational Transconductance Amplifier with Data-Driven Enhancement of Transconductance [PDF]
Electronics, 2019 An improved operational transconductance amplifier (OTA) is presented in this work. The fully differential OTA adopts the current recycling technique and complementary NMOS and PMOS input branches to enhance the total transconductance. Moreover, in order to achieve higher current efficiency, a data-driven biasing circuit was developed to dynamically ...
Xiang Li +5 more
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A model of partially-depleted SOI MOSFETs in the subthreshold range
Journal of Telecommunications and Information Technology, 2001 A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]
E3S Web of ConferencesSince the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae +2 more
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