Results 51 to 60 of about 10,610 (248)

Channel length effects on the performance of vOECTs

Materials Research Express
Channel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen, Baining Tao, Dan Zhao, Yixin Zhou, Yueheng Zhong, Sihui Hou, Liang-Wen Feng, Jianhua Chen, Gang Wang, Wei Huang   +9 more
doaj   +1 more source

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

Sensors, 2022
A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process.
Tahesin Samira Delwar, Abrar Siddique, Manas Ranjan Biswal, Prangyadarsini Behera, Yeji Choi, Jee-Youl Ryu   +5 more
doaj   +1 more source

Gate‐Programmable Linearization of Atomically Thin Nanoelectromechanical Resonators via Duffing Nonlinearity Cancellation

Advanced Functional Materials, EarlyView.
Gate bias is used to cancel Duffing nonlinearity in atomically thin MoS2 drumhead resonators, switching their response from hardening to softening and creating a nearly linear operating point. This electrical control suppresses hysteresis, enables stronger linear drive, and improves signal‐to‐noise ratio, offering a practical route to stable 2D NEMS ...
Pengcheng Zhang, Miroslav Haluska, Cosmin Roman, Christofer Hierold   +3 more
wiley   +1 more source

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al2O3 as Gate Dielectric [PDF]

, 2011
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. A 0.75-mu m-gate-length device has a maximum drain current of 70 mA/mm, a transconductance of 26 mS/mm, and a hole inversion mobility of 200 cm(2)/V
Min Xu, Xu, Min, Wang, Runsheng, Peide D. Ye, Runsheng Wang, Ye, Peide D.   +5 more
core   +2 more sources

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements [PDF]

, 2013
We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution ...
Johansson, Sofia, Lind, Erik
core   +3 more sources

The effect of nutrient broth media on PEDOT:PSS gated OECTs for whole-cell bacteria detection

Biosensors and Bioelectronics: X, 2022
The organic electrochemical transistor (OECT) is a device of much interest in biological sensing applications, including the detection of various cell types and electrolytes.
Eric Frantz, Jingchu Huang, Daewoo Han, Andrew J. Steckl   +3 more
doaj   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

A High Gain Operational Amplifier With Dual-Tail Source Architecture for Fast Slewing

IEEE Open Journal of Circuits and Systems
This work introduces an enhanced operational amplifier architecture in which four flipped voltage follower (FVF) cells act as adaptive tail current sources to improve the performance of a conventional current mirror (CM)-based design.
Meysam Akbari, Zahra Hashemi, Erika Covi, Kea-Tiong Tang   +3 more
doaj   +1 more source

Modelling of High Frequency Converter Transformer with Floating Active Inductor

Elektronika ir Elektrotechnika, 2018
As number of digital electronics and power electronics based devices has risen recently, the fields of application for high frequency transformers have been increased.
Mustafa Konal, Mehmet Onur Gulbahce, Cengiz Polat Uzunoglu, Fırat Kacar   +3 more
doaj   +1 more source