Results 191 to 200 of about 101,466 (316)

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In₂O₃ FETs. [PDF]

Sci Adv
Zuo S, Xie Z, Zhao X, Tang L, Zhao Y, Zeng Y, Niu W, Liu S, Li Q, Yang G, Li L, Wei Z, Ye C, Zou X, Liu X, Liao L, He P.   +16 more
europepmc   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

2D Materials Powering Neuromorphic Intelligence. [PDF]

Nanomicro Lett
Kazmi J, Ahmad W, Naqi M, Abbas Y, Abbas A, Wang P, Mohamed MA, Rosei F, Wang ZM, Song H.   +9 more
europepmc   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

A DTMOS-Based Memristor Emulator Circuit for Low-Power Biomedical Signal Conditioning. [PDF]

Micromachines (Basel)
Barraj I.
europepmc   +1 more source

Multidimensional and Multifunctional Laser‐Induced Graphene (LIG) for Point‐of‐Care and Wearable Biosensing, Theranostics, and Bioactive Interfaces Toward Personalized Healthcare and Regenerative Medicine

Advanced Science, EarlyView.
Multidimensional laser‐induced graphene (LIG) spanning from 0D to 3D architectures is comprehensively reviewed for multifunctional biomedical platforms, including biosensing, theranostics, and bioactive interface applications, which highlights its potentials for point‐of‐care diagnostics, wearable health monitoring, smart drug delivery, and tissue ...
Li Zhang, Yurou Yuan, Xiaohong Ding, Wing Cheung Mak   +3 more
wiley   +1 more source

Correction to "Odd-Even Effect in Photoreactivity and Transistor Property of Benzo[<i>b</i>]‑benzo[4,5]thieno[2,3‑<i>d</i>]thiophene Tethered with a Diacetylenic Group through a Spacer Chain". [PDF]

Chem Mater
Venkateswarlu S, Lin FJ, Tao YT.
europepmc   +1 more source

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

Advanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun, Mohammad Rezaei, Yuheng Hu, Guan‐Jun Zhang, Elison Matioli   +4 more
wiley   +1 more source

Dual-Modulated Vertically Stacked Transistors With Fully Laminated Plate-Type Architecture Featuring Nanoscale Channel Length. [PDF]

Adv Sci (Weinh)
Pyo G, Heo SJ, Jang J, Kang H, Lee B, Kwon HJ, Jang JE.   +6 more
europepmc   +1 more source