Results 191 to 200 of about 396,204 (347)

Ultrafast visual perception beyond human capabilities enabled by motion analysis using synaptic transistors. [PDF]

Nat Commun
Wang S, Zhao J, Pu T, Zhao L, Guo X, Cheng Y, Li C, Ma W, Tang C, Xu Z, Wang N, Occhipinti LG, Nathan A, Dahiya R, Wu H, Tao L, Gao S.   +16 more
europepmc   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

Advanced Materials Interfaces, EarlyView.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk, Michał Suplewski, Jacek Łubiński, Jakub Gierowski, Monika Kosowska, Mirosław Sawczak, Mattia Pierpaoli, Filip Janiak, Małgorzata Szczerska   +8 more
wiley   +1 more source

Graphene Field Effect Transistors: Diffusion-Drift Theory

, 2011
Gennady I. Zebrev
openalex   +1 more source

Corner Simulation of CMOS Analog Integrated Circuit Taking into Account Radiation Influence. [PDF]

Micromachines (Basel)
Ryzhov S, Kuznetsov V, Andreev V.
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Micro-LED/van der Waals heterointegration for in-pixel processing display architecture. [PDF]

Nat Commun
Wang F, Wu Y, Chu H, Yang J, Liu Z, Liu S, Yang Z, Li E, Liu J, Yin L, Li M, Zhang J.   +11 more
europepmc   +1 more source

Light‐Programmable Interfaces: From Molecular Photoswitching to Adaptive Membrane Separations

Advanced Materials Interfaces, EarlyView.
This review advances an interface‐centered framework for light‐responsive membranes, linking molecular photoswitches (azobenzene (AZO), spiropyran (SP), diarylethene (DAE), donor–acceptor Stenhouse adducts (DASA), photoacid) to integration strategies in polymeric, porous, self‐assembled, and mixed‐matrix systems.
Liangliang Zhang, Senlin Gu, Jianyang Zhao, Xiaojuan Hao, Lu Hua Li, Jihua Li, Lingxue Kong   +6 more
wiley   +1 more source

2D Material light-emitting transistor with a dynamically controllable emission location for optimized waveguide coupling on silicon. [PDF]

Sci Adv
Li C, Li Y, Zhong Y, Tang Y, Ning CZ.
europepmc   +1 more source

Microwave Absorption for Detection of Dirac Fermions in SnTe Films

Advanced Materials Interfaces, EarlyView.
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado, Jorge A. Navarro‐Giraldo, Muhammad Tahsin, Vinicius T. Santana, Eduardo Abramof, Paulo H. O. Rappl, Suelen de Castro, Marcelos L. Peres, Petr Neugebauer   +8 more
wiley   +1 more source

An investigation of tunnel diode-common-base transistor combinations for large gain-bandwidths

, 1967
J. S. Gray
openalex   +1 more source