Results 211 to 220 of about 335,727 (374)

A multifold coincidence-veto circuit using transistors [PDF]

, 1961
Árpád Barna, James Marshall, Matthew Sands   +2 more
openalex   +1 more source

Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

Advanced Materials Interfaces, EarlyView.
Control the structure and polarity of epitaxial GaN on 4H‐SiC substrate with precise interfacial configuration. Ga‐polar wz‐GaN with Si‐HT configuration, N‐polar wz‐GaN with Si‐TM and C‐TH configurations, whereas non‐polar 4|8 GaN with C‐MT configuration resulting from the polarity competition of GaN nucleation, respectively.
Haidong Yuan, Liwei Wang, Jiangming Guo, Ruimei Yuan, Zhenhua Lin, Jincheng Zhang, Lixin Guo, Yue Hao, Jingjing Chang   +8 more
wiley   +1 more source

Artificial non-monotonic neurons based on nonvolatile anti-ambipolar transistors. [PDF]

Nat Commun
Pang Y, Zhou Y, Qiu S, Tong L, Zhao N, Xu JB.   +5 more
europepmc   +1 more source

Scaled‐Up Graphene Growth Through Chemical Vapor Deposition Over Large‐Area Liquid Cu Catalysts

Advanced Materials Interfaces, EarlyView.
Scaling up the catalyst area fivefold and improving molten catalyst cleaning minimize reactor kinetic effects, enabling reaction kinetics to dominate graphene growth. This results in high‐quality graphene with controlled layering and measurable nucleation rates.
Mahesh K. Prabhu, Christos Tsakonas, Yilei Tian, Marc de Voogd, Kees E. Kolmeijer, Anastasios Manikas, Gertjan van Baarle, Grégory F. Schneider, Costas Galiotis, Irene M. N. Groot   +9 more
wiley   +1 more source

Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules. [PDF]

Micromachines (Basel)
Liu P, Deng Y.
europepmc   +1 more source

Production d'impulsions à flancs raides au moyen de transistors en régime d'avalanche [PDF]

, 1962
E. Schulte
openalex   +1 more source

Evolution of the Electronic Gap of Directly Synthesized Versus Mechanically Transferred WS2 Monolayer to Multilayer Films

Advanced Materials Interfaces, EarlyView.
The electronic properties of tungsten disulfide (WS₂) films are investigated using ultraviolet photoelectron and inverse photoemission spectroscopies (UPS/IPES). Differences in electronic gaps and energy levels between mechanically transferred and MOCVD‐grown films reveal the non‐negligible influence of preparation methods on electronic properties ...
Xu He, Jinpeng Tian, Wenjing Wu, Satya Butler, Shengxi Huang, Saien Xie, Antoine Kahn   +6 more
wiley   +1 more source

Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes. [PDF]

ACS Nano
Guo J, Lin Z, Che X, Wang C, Wan T, Yan J, Zhu Y, Chai Y.   +7 more
europepmc   +1 more source

Tunnel Diode-Transistor Twisted Ring Counter [PDF]

, 1969
Z.C. Tan
openalex   +1 more source

Organic Ferroelectric Synaptic Transistors for Neural Image Recognition Networks

Advanced Materials Interfaces, EarlyView.
All organic transistors, where both the dielectric and semiconducting layers are polymeric, are developed as electrical synaptic devices. Two copolymers of PVDF as the dielectric layer with large differences in their saturation polarizability and memory window are chosen.
Evan Restuccia, Arash Ghobadi, Suchismita Guha   +2 more
wiley   +1 more source