Results 221 to 230 of about 335,727 (374)
Low-power artificial neuron networks with enhanced synaptic functionality using dual transistor and dual memristor. [PDF]
Nalliboyina K, Ramachandran S.
europepmc +1 more source
50—Nanosecond Printed Circuit Linear Gate Using Transistors [PDF]
Árpád Barna, James Marshall
openalex +1 more source
The GaN‐based multichannel heterostructures with larger band conduction difference own better temperature stability. And lattice‐matched heterostructures can improve the temperature stability of the 2D electron gas in the bottom channel. Abstract In this study, 2 electron gas(2DEG) behaviors in Al0.28Ga0.72N/GaN multichannel heterostructures with doped
Wentao Zhang+7 more
wiley +1 more source
ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM. [PDF]
Park JM, Lee S, Lee J, Kwon JY.
europepmc +1 more source
The field-effect transistor — An old device with new promise
J. T. Wallmark
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Polyvinyl pyrrolidone passivation enhances TiO2/CsPbI2Br interfaces, suppressing recombination and improving photodetector performance with faster response, higher photoresponsivity, and superior detectivity. Abstract Inorganic perovskites hold immense promise for optoelectronic applications, but their performance is often hindered by defects and trap ...
Shruti Shah+12 more
wiley +1 more source
Electrolyte Gated Transistors for Brain Inspired Neuromorphic Computing and Perception Applications: A Review. [PDF]
Wang W, Zhu L.
europepmc +1 more source
A Simple Low-Noise Low-Frequency Transistor Amplifier [PDF]
L. Molyneux, J.W. OSSELTON
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A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water
The visual art depicts atoms dissolving in water, symbolizing the etching of Sr1‐xCaxVO3 thin films. This study demonstrates a new family of water‐soluble materials, expanding the lattice parameter range available for epitaxial growth on sacrificial layers.
Vincent Polewczyk+14 more
wiley +1 more source
Physics of 2D Materials for Developing Smart Devices. [PDF]
Goel N, Kumar R.
europepmc +1 more source