Results 261 to 270 of about 101,466 (316)
Some of the next articles are maybe not open access.

Field-effect transistor versus analog transistor (static induction transistor)

IEEE Transactions on Electron Devices, 1975
The reason why the usual FET shows the saturated characteristics has been shown that with increasing drain voltage, the effect of the negative feedback action, increases through a marked increase of the Series channel resistance in the neighborhood of the pinch-off voltage, under which condition the apparent transfercon-ductance G_{m'}= G_{m}/(1 + r_{s}
J. Nishizawa, T. Terasaki, J. Shibata
openaire   +1 more source

Current transistor-transistor-inductor oscillator

IEE Proceedings - Circuits, Devices and Systems, 1994
An original and very simple design of an oscillator is presented. It used only three components: two transistors and one earthed inductor. The circuit gives a constant quasi-square output with a periodic time proportional to its input current. The oscillation modes, the oscillation conditions and the effects of nonideal devices are discussed, and some ...
J.C. Commercon, M. Guivarch
openaire   +1 more source

Transistor configurations in integrated transistor antennas

Radio and Electronic Engineer, 1975
A uniform method of analysing the six basic integrated antenna structures by taking the relevant device configurations into consideration is presented in this paper. The possibility of height reduction at resonance at low frequency operation is examined for normal and reverse bias operation of the device as well as push-pull and push-push modes of ...
P.K. Rangole, S.P.S. Saini
openaire   +1 more source

Junction Transistors and Field-Effect Transistors

2020
Transistor was first invented in 1948 by John Bardeen and WH Brattain of Bell Laboratories, which was commercially used in the telephone circuits in 1951.
Satya Sai Srikant   +1 more
openaire   +1 more source

The Genesis Of The Transistor

Proceedings of the IEEE, 1998
The history of the transistor begins with the decision to study intensively the properties of silicon and germanium. This decision was made in 1946 as a result of a series of conferences intended to establish a plan for semiconductor research, which was then being resumed after a war-time lapse.
openaire   +1 more source

The toughest transistor yet [GaN transistors]

IEEE Spectrum, 2002
GaN transistors withstand extreme heat and are capable of handling frequencies and power levels well beyond those possible with silicon, gallium arsenide, silicon carbide, or essentially any other semiconductor yet fabricated. Frequency and power-handling capabilities of this caliber could make all the difference in amplifiers, modulators, and other ...
L.F. Eastman, U.K. Mishra
openaire   +1 more source

Reactance Transistor and Transistor Parameters

IETE Journal of Research, 1966
ABSTRACTOperation of the reactance transistor has been analysed in this paper by taking the physical parameters of the transistor into consideration. Since the inherent non-linearities of the transistor have been accounted for, it is pointed out that some of the assumptions not very clearly defined in literature may be dispensed with.Experimental ...
openaire   +1 more source

Graphene transistors

Nature Nanotechnology, 2010
Graphene has changed from being the exclusive domain of condensed-matter physicists to being explored by those in the electron-device community. In particular, graphene-based transistors have developed rapidly and are now considered an option for post-silicon electronics.
openaire   +2 more sources

Switching transistors

Proceedings of the May 6-8, 1958, western joint computer conference: contrasts in computers on XX - IRE-ACM-AIEE '58 (Western), 1958
Transistors are being used more and more frequently as components of computing systems. This increasing popularity can be attributed to their small size, high efficiency, and potential reliability. The size and efficiency of transistors are sufficiently well known to require no further discussion here.
openaire   +1 more source

Thin-film transistors

Electronics and Power, 1969
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
openaire   +1 more source

Home - About - Disclaimer - Privacy