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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.

Nature Nanotechnology, 2007
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating.
A. Das   +10 more
semanticscholar   +1 more source

Replacing a transistor with a compound transistor

IEEE Transactions on Circuits and Systems, 1988
As a result of their better overall performance in certain transistor circuits, Darlington pairs and compound transistors are often used to replace a single transistor. The authors consider the consequences of such a replacement on the circuit's DC behavior with respect to the number of operating points. They prove that if a circuit due to its topology
Alan N. Willson, Ljiljana Trajkovic
openaire   +2 more sources

A ferroelectric semiconductor field-effect transistor

Nature Electronics, 2018
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device.
M. Si   +11 more
semanticscholar   +1 more source

A Transistor Psychogalvanometer

The Journal of General Psychology, 1958
(1958). A Transistor Psychogalvanometer. The Journal of General Psychology: Vol. 59, No. 2, pp. 299-300.
Edwin Zolik, Clyde Reinhard
openaire   +3 more sources

The Invention of the Transistor

Reviews of Modern Physics, 1999
Arguably the most important invention of the past century, the transistor is often cited as the exemplar of how scientific research can lead to useful commercial products. Emerging in 1947 from a Bell Telephone Laboratories program of basic research on the physics of solids, it began to replace vacuum tubes in the 1950s and eventually spawned the ...
Michael Riordan   +2 more
openaire   +2 more sources

Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics.

Nature Nanotechnology, 2012
The celebrated electronic properties of graphene have opened the way for materials just one atom thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional ...
T. Georgiou   +14 more
semanticscholar   +1 more source

The future transistors

Nature, 2023
The metal-oxide-semiconductor field-effect transistor (MOSFET), a core element of complementary metal-oxide-semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past ...
Wei Cao   +7 more
openaire   +2 more sources

Junction Transistors and Field-Effect Transistors

2020
Transistor was first invented in 1948 by John Bardeen and WH Brattain of Bell Laboratories, which was commercially used in the telephone circuits in 1951.
Satya Sai Srikant   +1 more
openaire   +2 more sources

Transistor permutation for better transistor chaining

2009 IEEE 8th International Conference on ASIC, 2009
Custom layout design style remains to be an effective way of improving and differentiating the performance of integrated circuits. In this paper, we revisit the classic problem of transistor chaining, a key step in transistor level layout generation and report a systematic method for permutating transistors in a circuit topology such that without ...
Jianwen Zhu, Xun Chen
openaire   +2 more sources

Current transistor-transistor-inductor oscillator

IEE Proceedings - Circuits, Devices and Systems, 1994
An original and very simple design of an oscillator is presented. It used only three components: two transistors and one earthed inductor. The circuit gives a constant quasi-square output with a periodic time proportional to its input current. The oscillation modes, the oscillation conditions and the effects of nonideal devices are discussed, and some ...
M. Guivarch, J.C. Commercon
openaire   +2 more sources

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