Results 111 to 120 of about 131,700 (298)

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

open access: yesNanoscale Research Letters, 2018
Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type
Junku Liu   +9 more
doaj   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li   +5 more
wiley   +1 more source

Engineering Mechanics Division [PDF]

open access: yes
Screening methods for metal oxide semiconductor field effect transistors and resistors, impact survival testing of spacecraft electronic parts, and parachute jettisoning from planetary ...

core   +1 more source

Kinetic Regimes of Hydrogen Absorption in Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco   +7 more
wiley   +1 more source

Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis

open access: yesAIP Advances
Transistors find application within various integrated circuits (ICs) alongside a multitude of electronic devices. These ICs have become integral components in contemporary systems.
Manish Kumar Singh   +2 more
doaj   +1 more source

Unlocking Photodetection Mode Switching from a Simple Lateral Design

open access: yesAdvanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong   +10 more
wiley   +1 more source

Substrate Gating of Contact Resistance in Graphene Transistors

open access: yes, 2011
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry ...
Appenzeller, Joerg   +4 more
core   +1 more source

Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity

open access: yesAdvanced Functional Materials, EarlyView.
This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su   +5 more
wiley   +1 more source

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