Results 121 to 130 of about 131,700 (298)

Multi-layer graphene FET compact circuit-level model with temperature effects

, 2014
This paper presents a circuit-level model of a dual-gate bilayer and four layer graphene field effect transistor (GFET). The model provides an accurate estimation of the conductance at the charge neutrality point (CNP).
Al-Hashimi, Bashir, Kazmierski, Tom, Umoh, Ime Jarlath   +2 more
core   +1 more source

Selenium‐Incorporated Polymerized Nonfullerene Acceptors/SWCNT Composites with Polymer‐Assisted n‐Doping for High‐Performance Organic Thermoelectrics

Advanced Functional Materials, EarlyView.
Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng, Che‐An Chou, Chi Chang, Li‐Lun Yeh, Chien‐Yi Ku, Jhih‐Min Lin, Shih‐Huang Tung, Cheng‐Liang Liu, Yen‐Ju Cheng   +8 more
wiley   +1 more source

Comprehensive Study and Design of Graphene Transistor

Micromachines
Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics.
Qian Cai, Jiachi Ye, Belal Jahannia, Hao Wang, Chandraman Patil, Rasul Al Foysal Redoy, Abdulrahman Sidam, Sinan Sameer, Sultan Aljohani, Muhammed Umer, Aseel Alsulami, Essa Shibli, Bassim Arkook, Yas Al-Hadeethi, Hamed Dalir, Elham Heidari   +15 more
doaj   +1 more source

Engineered molecular stacking crystallinity of bar-coated TIPS-pentacene/polystyrene films for organic thin-film transistors. [PDF]

RSC Adv, 2023
Jo Y, Lee J, Kim C, Jang J, Hwang I, Hong J, Lee MJ.   +6 more
europepmc   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

Advanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo, Artur Ciesielski, Paolo Samorì   +2 more
wiley   +1 more source

Isomeric dibenzooctazethrene diradicals for high-performance air-stable organic field-effect transistors. [PDF]

Chem Sci, 2022
Zong C, Yang S, Sun Y, Zhang L, Hu J, Hu W, Li R, Sun Z.   +7 more
europepmc   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

N-type organic electrochemical transistors with stability in water

Nature Communications, 2016
Organic electrochemical transistors transduce ionic to electronic signals in aqueous solutions, holding promise for biological sensing applications. Here, Giovannitti et al.
Alexander Giovannitti, Christian B. Nielsen, Dan-Tiberiu Sbircea, Sahika Inal, Mary Donahue, Muhammad R. Niazi, David A. Hanifi, Aram Amassian, George G. Malliaras, Jonathan Rivnay, Iain McCulloch   +10 more
doaj   +1 more source

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

, 2015
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate.
Campion, R. P., Ciccarelli, C., Ferguson, A. J., Gallagher, B. L., Gonzalez-Zalba, M. F., Irvine, A. C., Jungwirth, T., Wunderlich, J., Zarbo, L. P.   +8 more
core   +2 more sources

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

Advanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee, Hyoik Jang, Myeongjin An, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source