Results 201 to 210 of about 19,767 (262)

Selenophene π‐Bridge Enables Balanced Ambipolar Transport in High‐Performance Organic Electrochemical Transistors

Advanced Science, EarlyView.
We synthesized a high‐performance balanced ambipolar OECT polymer, P(gTDPPSe), via selenophene π‐bridge engineering. The selenophene π‐bridge enhances backbone planarity and optimizes the energy levels for doping, enabling high and balanced p/n‐type transconductance‐a key factor for high‐gain complementary inverters.
Guichuan Zhu, Yueping Lai, Jiaxing Pu, Jianhua Chen, Liang‐Wen Feng   +4 more
wiley   +1 more source

Scaling nanoribbon transistors with monolayer transition metal dichalcogenides. [PDF]

Nat Nanotechnol
Peña T, Persson AEO, Krayev A, Friðriksdóttir Á, Su H, Lee YM, Song YS, Neilson K, Zhang Z, Hoang AT, Yang JA, Hoang L, Wang SX, Mannix AJ, McIntyre PC, Pop E.   +15 more
europepmc   +1 more source

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

Advanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang, Wenshu Ouyang, Yuhang Xiao, Wei Yan, Meifang Zhu   +4 more
wiley   +1 more source

Solution-Processed High-k HfO₂ Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness. [PDF]

Materials (Basel)
Sairike J, Tuokedaerhan K, Sailanbek S, Cai Z, Yang H.   +4 more
europepmc   +1 more source

Wafer-scale high-κ HfO₂ dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS₂ transistors. [PDF]

Nat Commun
Zhang S, Zhang T, Yu H, Li T, Li X, Cui C, Zhou Y, Guo H, Wang S, Zheng D, Huang L, Bai L, Liu S, Shen C, Yang W, Du L, Shi D, Xian L, Tao X, Chai Y, Li N, Zhang G.   +21 more
europepmc   +1 more source

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping. [PDF]

ACS Nano
Nagarajan S, König D, Ratschinski I, Galderisi G, Shams S, Mikolajick T, Hiller D, Trommer J.   +7 more
europepmc   +1 more source

Optoelectrically controlled transistors in graphene-based valley-gapless, indirect-gap, and spin-valley-gapless semiconductors. [PDF]

iScience
Lü XL, Hu ZH, Liu XZ, Zhang YC, Yang JE.   +4 more
europepmc   +1 more source

Plasma-Enhanced Atomic Layer Deposition Synthesis of Nanolayered Molybdenum Diselenide (MoSe₂) Thin Films for Nanoelectronics. [PDF]

ACS Omega
Sanchez F, Giwa I, Chimba B, Xiao E, Kisslinger K, Nykypanchuk D, Tong X, Camino F, Monikandan R, Xiao Z.   +9 more
europepmc   +1 more source

A novel observation of negative differential resistance in a standard CMOS transistor and its application to a compact frequency doubler. [PDF]

Microsyst Nanoeng
Kwak B, Cho Y, Han C, Lee J, Kim S, Shin Y, Choi J, Kim D, Lee SJ, Lee S, Kim HM, Shin W, Kwon D.   +12 more
europepmc   +1 more source

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A New Single Electron Transistor

50th Annual Device Research Conference, 1992
Summary form only given. The authors propose and demonstrate a novel single-electron transistor (SET) where the drain current is controlled by a single electron. This SET is similar to a GaAs-AlGaAs heterostructure modulation-doped FET, except that it has a split gate which electrostatically squeezes a 2-D channel into a 1-D channel, and it also has a ...
Stephen Y. CHOU, Yun WANG
openaire   +1 more source