Results 201 to 210 of about 19,829 (262)

Reversible Thickness Engineering in Amorphous In₂O₃ Transistors. [PDF]

Nano Lett
Pan YY, Hsu CH, Tseng R, Wang ST, Chang YC, Chen SC, Kimura T, Lan YW, Lien DH.   +8 more
europepmc   +1 more source

Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging

Advanced Science, EarlyView.
A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn, Sanghoon Park, Seunghyup Yoo   +2 more
wiley   +1 more source

Solution-Processed High-k HfO₂ Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness. [PDF]

Materials (Basel)
Sairike J, Tuokedaerhan K, Sailanbek S, Cai Z, Yang H.   +4 more
europepmc   +1 more source

Wafer-scale high-κ HfO₂ dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS₂ transistors. [PDF]

Nat Commun
Zhang S, Zhang T, Yu H, Li T, Li X, Cui C, Zhou Y, Guo H, Wang S, Zheng D, Huang L, Bai L, Liu S, Shen C, Yang W, Du L, Shi D, Xian L, Tao X, Chai Y, Li N, Zhang G.   +21 more
europepmc   +1 more source

Scaling nanoribbon transistors with monolayer transition metal dichalcogenides. [PDF]

Nat Nanotechnol
Peña T, Persson AEO, Krayev A, Friðriksdóttir Á, Su H, Lee YM, Song YS, Neilson K, Zhang Z, Hoang AT, Yang JA, Hoang L, Wang SX, Mannix AJ, McIntyre PC, Pop E.   +15 more
europepmc   +1 more source

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping. [PDF]

ACS Nano
Nagarajan S, König D, Ratschinski I, Galderisi G, Shams S, Mikolajick T, Hiller D, Trommer J.   +7 more
europepmc   +1 more source

Optoelectrically controlled transistors in graphene-based valley-gapless, indirect-gap, and spin-valley-gapless semiconductors. [PDF]

iScience
Lü XL, Hu ZH, Liu XZ, Zhang YC, Yang JE.   +4 more
europepmc   +1 more source

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Transistor Electronics: Imperfections, Unipolar And Analog Transistors

Proceedings of the IEEE, 1952
The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal.
openaire   +1 more source

A New Single Electron Transistor

50th Annual Device Research Conference, 1992
Summary form only given. The authors propose and demonstrate a novel single-electron transistor (SET) where the drain current is controlled by a single electron. This SET is similar to a GaAs-AlGaAs heterostructure modulation-doped FET, except that it has a split gate which electrostatically squeezes a 2-D channel into a 1-D channel, and it also has a ...
Stephen Y. CHOU, Yun WANG
openaire   +1 more source

Hot Electron Transistors

Extended Abstracts of the 1986 International Conference on Solid State Devices and Materials, 1986
The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electron-phonon system. The mean free path, for a non-equilibrium electron is shown to be critically dependent on the electron concentration in the base region ...
J. R. Hayes, A. F. J. Levi, A. C. Gossard, J. H. English   +3 more
openaire   +2 more sources