Results 211 to 220 of about 19,767 (262)

Hot Electron Transistors

Extended Abstracts of the 1986 International Conference on Solid State Devices and Materials, 1986
The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electron-phonon system. The mean free path, for a non-equilibrium electron is shown to be critically dependent on the electron concentration in the base region ...
J. R. Hayes, A. F. J. Levi, A. C. Gossard, J. H. English   +3 more
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Transistor Electronics: Imperfections, Unipolar And Analog Transistors

Proceedings of the IEEE, 1952
The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal.
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A transistorized electronic stimulator†

International Journal of Electronics, 1973
Abstract This paper describes the design of an economical transistorized stimulator suitable for use by students in physiological studies, as well as in research applications. The repetition rate, pulse duration and magnitude of the output pulse are individually selectable by range and by variable fine control within each range. The instrument has been
E. V. RAJA RAO, A. K. SEGHAL
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Basic Electronics: A Look at Transistors

Biomedical Instrumentation & Technology, 2006
47 As one of the most important inventions of the 20th century, transistors have replaced bulky vacuum tubes and allowed equipment to be made smaller and more reliable. If you remember your electronics courses, you will recall that there are many types of these devices. The basic bipolar or junction transistor is composed of P-type and N-type materials
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The single-electron transistor

Reviews of Modern Physics, 1992
The discovery of periodic conductance oscillations as a function of charge density in very small transistors has led to a new understanding of the behavior of electrons in such small structures. It has been demonstrated that, whereas a conventional transistor turns on only once as electrons are added to it, submicronsize transistors, isolated from ...
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Electron-diffraction transistors

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 2003
The design, fabrication, and applications of QUADFETs (quantum diffraction field effect transistors) are described. The QUADFETs will enable Fraunhofer diffraction to be demonstrated and exploited. These devices are high-electron-mobility transistors (HEMTs), in which the source and a specially formed drain perform the functions of the light source and
G.H. Bernstein, A.M. Kriman
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Developments in Transistor Electronics†

Journal of Electronics and Control, 1958
ABSTRACT The design theory of point-contact and junction transistors is reviewed in this paper. Selected examples illustrate the small-signal and large-signal properties of junction transistors. These phenomena are related to the theory of p— n junctions. Also, it is indicated how circuit engineers benefit from a certain know-ledge of transistor theory.
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Transistor Electronics

2013
http://archive.org/details ...
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Junction Transistor Electronics

Proceedings of the IRE, 1955
The density and kind of charge carriers in semiconductors are controlled by the density and nature of added impurities. The charge carriers (electrons and holes) move about in the crystal simultaneously by diffusion and drift. Rectification occurs at p-n boundaries because of the difference in the carrier types on either side.
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Electronic Structure Methods for the Description of Nonadiabatic Effects and Conical Intersections

Chemical Reviews, 2021
Spiridoula Matsika
exaly