Results 211 to 220 of about 19,112 (260)

Universal Logic-in-Memory Gates Using Reconfigurable Silicon Transistors. [PDF]

Micromachines (Basel)
Kim S, Kim N, Ko Y, Lim D.
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Hot Electron Transistors

Extended Abstracts of the 1986 International Conference on Solid State Devices and Materials, 1986
The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electron-phonon system. The mean free path, for a non-equilibrium electron is shown to be critically dependent on the electron concentration in the base region ...
J. R. Hayes, A. F. J. Levi, A. C. Gossard, J. H. English   +3 more
openaire   +2 more sources

Electron-diffraction transistors

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 2003
The design, fabrication, and applications of QUADFETs (quantum diffraction field effect transistors) are described. The QUADFETs will enable Fraunhofer diffraction to be demonstrated and exploited. These devices are high-electron-mobility transistors (HEMTs), in which the source and a specially formed drain perform the functions of the light source and
G.H. Bernstein, A.M. Kriman
openaire   +1 more source

Transistor Electronics: Imperfections, Unipolar And Analog Transistors

Proceedings of the IEEE, 1952
The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal.
openaire   +1 more source

Sketched oxide single-electron transistor

Nature Nanotechnology, 2011
Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal ...
Guanglei, Cheng, Pablo F, Siles, Feng, Bi, Cheng, Cen, Daniela F, Bogorin, Chung Wung, Bark, Chad M, Folkman, Jae-Wan, Park, Chang-Beom, Eom, Gilberto, Medeiros-Ribeiro, Jeremy, Levy   +10 more
openaire   +2 more sources

A New Single Electron Transistor

50th Annual Device Research Conference, 1992
Summary form only given. The authors propose and demonstrate a novel single-electron transistor (SET) where the drain current is controlled by a single electron. This SET is similar to a GaAs-AlGaAs heterostructure modulation-doped FET, except that it has a split gate which electrostatically squeezes a 2-D channel into a 1-D channel, and it also has a ...
Stephen Y. CHOU, Yun WANG
openaire   +1 more source

Resonant-tunneling hot electron transistor (RHET)

Solid-State Electronics, 1988
Heiblum proposed a hot electron transistor, THETA, that [8.1] used semiconductor heterojunctions. The good lattice match and the single-crystal epitaxial growth with molecular beam epitaxy (MBE) provides superior interfaces difficult to obtain with metal-oxide or metal-semiconductors.
N. Yokoyama, S. Muto, H. Ohnishi, K. Imamura, T. Mori, T. Inata   +5 more
openaire   +1 more source

Junction Transistor Electronics

Proceedings of the IRE, 1955
The density and kind of charge carriers in semiconductors are controlled by the density and nature of added impurities. The charge carriers (electrons and holes) move about in the crystal simultaneously by diffusion and drift. Rectification occurs at p-n boundaries because of the difference in the carrier types on either side.
openaire   +1 more source

Ballistic hot-electron transistors

IBM Journal of Research and Development, 1990
We present an overview of work at the IBM Thomas J. Watson Research Center on the tunneling hot-electron transfer amplifier (THETA) device—including its use as an amplifier and as a tool for investigating ballistic hot-electron transport. In the initial, vertically configured version of the device, a quasi-monoenergetic, variable-energy, hot-electron ...
M. Heiblum, M. V. Fischetti
openaire   +1 more source

Transistorized Electronic Analog Multiplier

Review of Scientific Instruments, 1961
The exponential current-voltage characteristic of the input of a grounded base junction transistor is utilized to construct an analog multiplier. Four-quadrant operation is obtained by using two channels—one with pnp and the other with npn transistors. Design considerations of the various components of the multiplier are discussed. It is shown that the
S. Deb, J. K. Sen
openaire   +1 more source