Results 241 to 250 of about 131,700 (298)

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

open access: yesAdvanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin   +11 more
wiley   +1 more source

Spintronic Bayesian Hardware Driven by Stochastic Magnetic Domain Wall Dynamics

open access: yesAdvanced Science, EarlyView.
Magnetic Probabilistic Computing (MPC) utilizes intrinsic stochastic dynamics in domain walls to establish a hardware foundation for uncertainty‐aware artificial intelligence. Thermally driven domain‐wall fluctuations, voltage‐controlled magnetic anisotropy, and TMR readout enable fully electrical, tunable probabilistic inference.
Tianyi Wang   +11 more
wiley   +1 more source

Synergistic Effects of Additive Engineering in Enhancing the Performance of Sn-Pb Perovskite Thin-Film Transistors and Derived Logic Circuits. [PDF]

open access: yesAdv Sci (Weinh)
Ansari ZA   +11 more
europepmc   +1 more source

Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics. [PDF]

open access: yesAdv Sci (Weinh)
Ren S   +8 more
europepmc   +1 more source

Computing-in-memory architecture for Kolmogorov-Arnold networks based on tunable Gaussian-like memory cells. [PDF]

open access: yesNat Commun
Wen Z   +10 more
europepmc   +1 more source

Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistors. [PDF]

open access: yesNat Commun
Zhang J   +12 more
europepmc   +1 more source

Hot Electron Transistors

Extended Abstracts of the 1986 International Conference on Solid State Devices and Materials, 1986
The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electron-phonon system. The mean free path, for a non-equilibrium electron is shown to be critically dependent on the electron concentration in the base region ...
J. R. Hayes   +3 more
openaire   +2 more sources

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