Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin +11 more
wiley +1 more source
Integrated Circuits on Fiber Substrates: State-of-the-Art System-on-Fiber Technologies for Smart Textiles and Wearables. [PDF]
Jin J +5 more
europepmc +1 more source
Spintronic Bayesian Hardware Driven by Stochastic Magnetic Domain Wall Dynamics
Magnetic Probabilistic Computing (MPC) utilizes intrinsic stochastic dynamics in domain walls to establish a hardware foundation for uncertainty‐aware artificial intelligence. Thermally driven domain‐wall fluctuations, voltage‐controlled magnetic anisotropy, and TMR readout enable fully electrical, tunable probabilistic inference.
Tianyi Wang +11 more
wiley +1 more source
Synergistic Effects of Additive Engineering in Enhancing the Performance of Sn-Pb Perovskite Thin-Film Transistors and Derived Logic Circuits. [PDF]
Ansari ZA +11 more
europepmc +1 more source
Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics. [PDF]
Ren S +8 more
europepmc +1 more source
Computing-in-memory architecture for Kolmogorov-Arnold networks based on tunable Gaussian-like memory cells. [PDF]
Wen Z +10 more
europepmc +1 more source
Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistors. [PDF]
Zhang J +12 more
europepmc +1 more source
Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Yang HC +4 more
europepmc +1 more source
Native GaN/GaO<sub>x</sub> Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors. [PDF]
Liang J +7 more
europepmc +1 more source
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The transport properties of non-equilibrium electrons in GaAs Hot Electron Transistors has been successfully probed using Hot Electron Spectroscopy, and explained in terms of a fully coupled electron-phonon system. The mean free path, for a non-equilibrium electron is shown to be critically dependent on the electron concentration in the base region ...
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