Results 261 to 270 of about 131,700 (298)
Some of the next articles are maybe not open access.
2015
The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
openaire +1 more source
The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
openaire +1 more source
2015
In this thesis, the realization of new single electron transistor based circuits and the simulation of their operation is presented. The main tool used towards this aim is the SECSSimulator (SingleElectronCircuitSimulator).A detailed description of the physics behind single electron transistors and of the simulation methods is provided in the first ...
openaire +1 more source
In this thesis, the realization of new single electron transistor based circuits and the simulation of their operation is presented. The main tool used towards this aim is the SECSSimulator (SingleElectronCircuitSimulator).A detailed description of the physics behind single electron transistors and of the simulation methods is provided in the first ...
openaire +1 more source
Electron Spins in Single Electron Transistors
2009Abstract : Measurements of a single electron spin showed that the excited spin state in a GaAs single electron transistor can live for as long as 1s. However, the decoherence time in the excited state is known to be short, because of the coupling to nuclear spins.
openaire +1 more source
Developments in Transistor Electronics†
Journal of Electronics and Control, 1958ABSTRACT The design theory of point-contact and junction transistors is reviewed in this paper. Selected examples illustrate the small-signal and large-signal properties of junction transistors. These phenomena are related to the theory of p— n junctions. Also, it is indicated how circuit engineers benefit from a certain know-ledge of transistor theory.
openaire +1 more source
Electronic Structure Methods for the Description of Nonadiabatic Effects and Conical Intersections
Chemical Reviews, 2021Spiridoula Matsika
exaly
Design, fabrication and assembly considerations for electronic systems made of fibre devices
Nature Reviews Materials, 2023Xiang Shi +2 more
exaly
Charge-density-wave-driven electronic nematicity in a kagome superconductor
Nature, 2022Linpeng Nie, Kuanglv Sun, Wanru
exaly