Results 21 to 30 of about 19,767 (262)

Temperature-Dependent Logic Behavior of Logic Transistors Based on WS₂

IEEE Access, 2020
With the advantages of two-dimensional (2D) materials, the small footprint logic transistor architecture can realize the primary logic function (OR and AND) in a single cell.
Yan Xiong, Xiaozhang Chen, Zhenhan Zhang, Huawei Chen, Jiayi Li, Chunsen Liu, Peng Zhou   +6 more
doaj   +1 more source

Bottom‐Up Single‐Electron Transistors

Advanced Materials, 2017
AbstractAs the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is ...
Makarenko, Ksenia S., Liu, Zhihua, de Jong, Michel P., Zwanenburg, Floris A., Huskens, Jurriaan, van der Wiel, Wilfred G.   +5 more
openaire   +3 more sources

Ebers–Moll model inspired equivalent circuit for quantum thermal transistors

APL Quantum
The widespread success of electronic transistors is partly due to their ability to be modeled using equivalent circuits, which not only enables detailed analysis and efficient design but also provides greater insight for designers, facilitating the ...
Anuradhi Rajapaksha, Sarath D. Gunapala, Malin Premaratne   +2 more
doaj   +1 more source

A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

APL Materials, 2015
A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate.
L. M. Dumitru, K. Manoli, M. Magliulo, T. Ligonzo, G. Palazzo, L. Torsi   +5 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Research progress in stannous oxide thin film transistors

Cailiao gongcheng, 2020
Due to its unique optical and electrical properties, p-type metal oxide materials stannous oxide has been favored by more and more people in various fields such as catalysis, sensing and optoelectronic devices.This paper focuses on the research and ...
DENG Pei-miao, NING Hong-long, XIE Wei-guang, LIU Xian-zhe, DENG Yu-xi, YAO Ri-hui, PENG Jun-biao   +6 more
doaj   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

The diamond RF-transistor model [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011
In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen
Altukhov A. A., Zyabluk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V.   +4 more
doaj   +2 more sources

Hyperchaotic Self-Oscillations of Two-Stage Class C Amplifier With Generalized Transistors

IEEE Access, 2021
This paper yields process of development, numerical analysis, lumped circuit modeling, and experimental verification of a new hyperchaotic oscillator based on the fundamental topology of two-stage amplifier.
Jiri Petrzela
doaj   +1 more source