Results 41 to 50 of about 131,700 (298)

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

, 2018
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cooling,
Kageura, Taisuke, Kawarada, Hiroshi, Sasama, Yosuke, Takahide, Yamaguchi, Takano, Yoshihiko, Takeya, Hiroyuki   +5 more
core   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

Advanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang, Max Gießübel, Pankaj Dharpure, Andrea Albert, Vira Niestierkina, Paul Mulvaney, Mukundan Thelakkat, Jürgen Köhler   +7 more
wiley   +1 more source

The diamond RF-transistor model [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011
In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen
Altukhov A. A., Zyabluk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V.   +4 more
doaj   +2 more sources

Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications [PDF]

, 2017
In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption.
Moll Echeto, Francisco de Borja, Nunes Cavalheiro, David Manuel, Valtchev, Stanimir   +2 more
core   +2 more sources

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

How Far Is the Nanocellulose Chip and Its Production in Reach? A Literature Survey

Nanomaterials
The slowdown of Moore’s Law necessitates an exploration of novel computing methodologies, new materials, and advantages in chip design. Thus, carbon-based materials have promise for more energy-efficient computing systems in the future.
Elena Bencurova, André Chinazzo, Bipasa Kar, Matthias Jung, Thomas Dandekar   +4 more
doaj   +1 more source

One dimensional transport in silicon nanowire junction-less field effect transistors

Scientific Reports, 2017
Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D ...
Muhammad M. Mirza, Felix J. Schupp, Jan A. Mol, Donald A. MacLaren, G. Andrew D. Briggs, Douglas J. Paul   +5 more
doaj   +1 more source

A new dry biomedical electrode [PDF]

, 1973
Electronic circuitry contains new operational amplifier which incorporates monolithic super-gain transistors. Electrode does not provide voltage amplification; instead, it acts as current amplifier to make it possible to pick up electrical potentials ...
Cleveland, G. J., Luce, R. S.
core   +1 more source

Hysteresis of Electronic Transport in Graphene Transistors

, 2010
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range.
Adam S., Ando T., Booth T. J., Castro Neto A. H., Chen F., Cho S., Chunxiao Cong, Cui J. B., Dan Y., Farmer D. B., Fuhrer M. S., Geim A. K., Geringer V., Guinea F., Haomin Wang, Jang C., Jingzhi Shang, Joshi P., Katsnelson M. I., Kim K., Kim W., Lafkioti M., Leenaerts O., Leenaerts O., Li X., Liao Z., Lohmann T., Martin J., Meyer J. C., Meyer J. C., Moser J., Moser J., Novoselove K. S., Radosavljevi M., Sabio J., Sabri S. S., Sadowski M. L., Schedin F., Tan Y. W., Ting Yu, Unarunotai S., Wang H. M., Wang H. M., Yan J., Yan J., Yihong Wu, Yoo J. S., Zhang L., Zheng Y.   +48 more
core   +1 more source

Electrical Transport Properties of Single-Layer WS2 [PDF]

, 2014
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties.
Allain, Adrien, Dumcenco, Dumitru, Huang, Ying-Sheng, Kis, Andras, Ovchinnikov, Dmitry   +4 more
core   +2 more sources