Results 41 to 50 of about 19,767 (262)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Optimized photolithographic fabrication process for carbon nanotube devices

AIP Advances, 2011
We have developed a photolithographic process for the fabrication of large arrays of single walled carbon nanotube transistors with high quality electronic properties that rival those of transistors fabricated by electron beam lithography. A buffer layer
S. M. Khamis, R. A. Jones, A. T. Charlie Johnson   +2 more
doaj   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

One dimensional transport in silicon nanowire junction-less field effect transistors

Scientific Reports, 2017
Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D ...
Muhammad M. Mirza, Felix J. Schupp, Jan A. Mol, Donald A. MacLaren, G. Andrew D. Briggs, Douglas J. Paul   +5 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Functionalized MXene ink enables environmentally stable printed electronics

Nature Communications
Establishing dependable, cost-effective electrical connections is vital for enhancing device performance and shrinking electronic circuits. MXenes, combining excellent electrical conductivity, high breakdown voltage, solution processability, and two ...
Tae Yun Ko, Heqing Ye, G. Murali, Seul-Yi Lee, Young Ho Park, Jihoon Lee, Juyun Lee, Dong-Jin Yun, Yury Gogotsi, Seon Joon Kim, Se Hyun Kim, Yong Jin Jeong, Soo-Jin Park, Insik In   +13 more
doaj   +1 more source

Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors

Chemosensors
More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits.
Cristian Ravariu, Elena Manea, Cătălin Pârvulescu, Gabriel Dima   +3 more
doaj   +1 more source

Texoskeletons: Developing the Fundamental Technologies for Creating Intelligent Soft Robotic Clothing With Integrated 1D Sensors and Actuators

Advanced Functional Materials, EarlyView.
ABSTRACT Traditional wearable exoskeletons rely on rigid structures, which limit comfort, flexibility, and everyday usability. This work introduces the fundamental technologies to create the first soft, lightweight, intelligent textile‐based exoskeletons (Texoskeletons) built using 1D sensors and actuators.
Amy Lukomiak, Rameesh Bulathsinghala, Jack Varga, Shuxin Meng, Kalana Marasinghe, Imaad Refai, Biyon Fernando, Amitkumar Patel, Chamika M. Halloluwa‐Arachchige, Carlos Oliveira, Arash M. Shahidi, Zahra Rahemtulla, Alexander Turner, Ziyun Ding, Bernard X. W. Liew, Andy Kerr, Ezio Preatoni, Theo Hughes‐Riley, Ishara Dharmasena, Pasindu Lugoda   +19 more
wiley   +1 more source

Tailoring Li‐ion Storage and Transport in Two‐Dimensional Conjugated Metal‐Organic Frameworks via Precise Nitrogen Incorporation

Advanced Functional Materials, EarlyView.
Two nitrogen‐doped 2D conjugated metal‐organic frameworks (2D c‐MOFs, namely Cu‐Nx‐OHBA, x = 2 or 4) are synthesized, featuring precise nitrogen incorporation via rational ligand design. The Cu‐Nx‐OHBA 2D c‐MOFs are largely tailorable by varying skeletal nitrogen density, with respect to electrical conductivity, Li‐storage capacitance, and Li‐transport
Xiangyu Li, Shaoze Shi, Fucai Cui, Rashid Iqbal, Pengyu Wang, Tianrui Wu, Jingcheng Hao, Renhao Dong   +7 more
wiley   +1 more source