Results 41 to 50 of about 6,786,136 (293)
The diamond RF-transistor model [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2011 In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen
Altukhov A. A. +4 more
doaj +2 more sources
Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter
E3S Web of Conferences, 2017 This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS) converter.
Blanes J. M. +8 more
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Advanced Functional Materials, EarlyView.ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti +16 more
wiley +1 more source
Kelvin force microscopy of polymer and small molecule thin-film transistors
, 2011 By their nature, scanning probe microscopy (SPM) measurements are ideally suited to the study of organic thin-film transistors (TFTs). In Chapter 3 surface potential measurements are made on TFTs made from the polymer pBTTT.
Bain, Stephen
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How Far Is the Nanocellulose Chip and Its Production in Reach? A Literature Survey
NanomaterialsThe slowdown of Moore’s Law necessitates an exploration of novel computing methodologies, new materials, and advantages in chip design. Thus, carbon-based materials have promise for more energy-efficient computing systems in the future.
Elena Bencurova +4 more
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Prospects for the Application of Nanotechnologies to the Computer System Architecture [PDF]
Журнал нано- та електронної фізики, 2012 Computer system architecture essentially influences the comfort of our everyday living. Developmental transition from electromechanical relays to vacuum tubes, from transistors to integrated circuits has significantly changed technological standards for ...
M. Mazur, J. Partyka
doaj
One dimensional transport in silicon nanowire junction-less field effect transistors
Scientific Reports, 2017 Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D ...
Muhammad M. Mirza +5 more
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Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Thin film engineering for transparent thin film transistors [PDF]
, 2014 Zinc oxide (ZnO) and Indium Gallium Zinc Oxide (IGZO) thin films are of interest as oxide semiconductors in thin film transistor (TFT) applications, due to visible light transparency, and low deposition temperature.
Abusabee, KM
core
Advanced Functional Materials, EarlyView.Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source