Results 51 to 60 of about 6,786,136 (293)

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Monte Carlo simulation of silicon-germanium transistors [PDF]

, 2002
Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha, Yangthaisong, Anucha   +1 more
core  

Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors

Chemosensors
More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits.
Cristian Ravariu, Elena Manea, Cătălin Pârvulescu, Gabriel Dima   +3 more
doaj   +1 more source

A Graphene-Based Hot Electron Transistor

Nano Letters, 2013
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the
Sam Vaziri, Grzegorz Lupina, Christoph Henkel, Anderson D. Smith, Mikael Östling, Jarek Dabrowski, Gunther Lippert, Wolfgang Mehr, Max C. Lemme   +8 more
openaire   +3 more sources

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

High-frequency characteristics of ultra-short gate MoS2 transistors

Applied Physics Express
Short channel transistors are gaining attention for high-frequency applications. MoS _2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance.
Akiko Ueda, Hiroshi Imamura, Hirokazu Fukidome   +2 more
doaj   +1 more source

Bottom‐Up Single‐Electron Transistors

Advanced Materials, 2017
AbstractAs the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is ...
Makarenko, Ksenia S., Liu, Zhihua, de Jong, Michel P., Zwanenburg, Floris A., Huskens, Jurriaan, van der Wiel, Wilfred G.   +5 more
openaire   +3 more sources

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

Advanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin, Long‐Qing Chen, Dean R. Evans, Venkatraman Gopalan   +5 more
wiley   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B., Ashburn, P., Fang, Q., Gunn, R., Allen, M. W., Partridge, J., Clark, O.D., Sultan, S.M., Sun, K., Chong, H.M.H.   +9 more
core   +1 more source

Optimized photolithographic fabrication process for carbon nanotube devices

AIP Advances, 2011
We have developed a photolithographic process for the fabrication of large arrays of single walled carbon nanotube transistors with high quality electronic properties that rival those of transistors fabricated by electron beam lithography. A buffer layer
S. M. Khamis, R. A. Jones, A. T. Charlie Johnson   +2 more
doaj   +1 more source