Results 51 to 60 of about 19,767 (262)

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

High-frequency characteristics of ultra-short gate MoS2 transistors

Applied Physics Express
Short channel transistors are gaining attention for high-frequency applications. MoS _2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance.
Akiko Ueda, Hiroshi Imamura, Hirokazu Fukidome   +2 more
doaj   +1 more source

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Ferritin Single-Electron Transistor

The Journal of Physical Chemistry B
We report on the fabrication of a single-electron transistor based on ferritin using wide self-aligned nanogap devices. A local gate below the gap area enables three-terminal electrical measurements, showing the Coulomb blockade in good agreement with the single-electron tunneling theory.
Jacqueline A. Labra-Muñoz, Herre S. J. van der Zant   +1 more
openaire   +2 more sources

Hybrid Solar Cell/Triboelectric Nanogenerator Based on Stable Two‐Dimensional Covalent Organic Frameworks

Advanced Functional Materials, EarlyView.
This study highlights the integration of stable two‐dimensional covalent organic framework (COF) films as photoactive layers in hybrid nanoenergy devices. The results demonstrate their capacity to generate electricity under both sunny and rainy conditions, showcasing versatility and resilience.
Joab D. Guerrero, Susana Ramos‐Terrón, Salvador R. G. Balestra, José M. Malagón, David Aparicio, Lucia Velasco, Asterios Charisiadis, Dooshaye Moonshiram, Margarita Darder, Pilar Aranda, Bernd Wicklein, Gustavo de Miguel, Javier Pérez‐Carvajal, Eva M. García‐Frutos   +13 more
wiley   +1 more source

Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping [PDF]

APL Electronic Devices
A persistent challenge in transition metal dichalcogenide (TMD)-based transistors is the formation of a Schottky Barrier (SB) at the metal–TMD interface which introduces substantial contact resistance and degrades device performance.
Somaditya Santra, Sankalp Samdariya, Shaili Sett, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh   +5 more
doaj   +1 more source

Correlation between the static and dynamic responses of organic single-crystal field-effect transistors

Nature Communications, 2020
Though literature reports improvements in organic electronic device performance, understanding the correlation between static and dynamic device responses remains a challenge.
Taiki Sawada, Akifumi Yamamura, Mari Sasaki, Kayo Takahira, Toshihiro Okamoto, Shun Watanabe, Jun Takeya   +6 more
doaj   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Applied Sciences, 2020
The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance ...
Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, Bernard Plaçais   +14 more
doaj   +1 more source

Electrocapillary Modulated Interfacial Tension Amplifies Liquid Metal Transduction

Advanced Functional Materials, EarlyView.
This study presented an electrocapillary‐enhanced magnetohydrodynamic pumping strategy that harnesses the Lorentz force and interfacial tension modulation of liquid metal droplets to achieve amplified fluidic power. The system enabled low‐voltage, self‐oscillating fluidic transduction with enhanced pressure and flow generation, supporting compact ...
Saba Firouznia, Ciqun Xu, Michael D. Dickey, Jonathan Rossiter   +3 more
wiley   +1 more source