Results 61 to 70 of about 19,829 (262)

Correlation between the static and dynamic responses of organic single-crystal field-effect transistors

Nature Communications, 2020
Though literature reports improvements in organic electronic device performance, understanding the correlation between static and dynamic device responses remains a challenge.
Taiki Sawada, Akifumi Yamamura, Mari Sasaki, Kayo Takahira, Toshihiro Okamoto, Shun Watanabe, Jun Takeya   +6 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Nanoscale Research Letters, 2018
Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type
Junku Liu, Yangyang Wang, Xiaoyang Xiao, Kenan Zhang, Nan Guo, Yi Jia, Shuyun Zhou, Yang Wu, Qunqing Li, Lin Xiao   +9 more
doaj   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Damage Effect of Single and Sequential Neutron/γ Irradiation on Bipolar Device

Yuanzineng kexue jishu
Bipolar transistors are widely used in electronic circuits and serve as core components in various devices. In the complex radiation environments, electronic circuits are exposed to more than one type of radiation particle.
XING Jiabin1, WANG Kai2, CAO Fei1, YANG Jianqun2, QIN Jianqiang1
doaj   +1 more source

Ferritin Single-Electron Transistor

The Journal of Physical Chemistry B
We report on the fabrication of a single-electron transistor based on ferritin using wide self-aligned nanogap devices. A local gate below the gap area enables three-terminal electrical measurements, showing the Coulomb blockade in good agreement with the single-electron tunneling theory.
Jacqueline A. Labra-Muñoz, Herre S. J. van der Zant   +1 more
openaire   +2 more sources

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Hydrogen bonding-driven Ohmic contact in Sc2CT2 (T=H, F, OH) based field-effect transistors [PDF]

APL Electronic Devices
With the continuous miniaturization of transistors, atomically thin two-dimensional (2D) semiconductor materials have shown significant promise for developing advanced electronic devices.
Jiaxiang Li, Bo Wu, Baisheng Sa, Cuilian Wen, Jiansen Wen, Zhou Cui, Yinggan Zhang, Yu Shu, Zihao Xu   +8 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis

AIP Advances
Transistors find application within various integrated circuits (ICs) alongside a multitude of electronic devices. These ICs have become integral components in contemporary systems.
Manish Kumar Singh, Kadiyam Anusha, A. D. D. Dwivedi   +2 more
doaj   +1 more source