Results 61 to 70 of about 19,767 (262)

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Hydrogen bonding-driven Ohmic contact in Sc2CT2 (T=H, F, OH) based field-effect transistors [PDF]

APL Electronic Devices
With the continuous miniaturization of transistors, atomically thin two-dimensional (2D) semiconductor materials have shown significant promise for developing advanced electronic devices.
Jiaxiang Li, Bo Wu, Baisheng Sa, Cuilian Wen, Jiansen Wen, Zhou Cui, Yinggan Zhang, Yu Shu, Zihao Xu   +8 more
doaj   +1 more source

All‐Solution‐Processed HgTe Quantum Dot Photodetectors for Extended Short‐Wavelength Infrared Range Enhanced by Plasmonic ITO Nanocrystals

Advanced Functional Materials, EarlyView.
All‐solution‐processed, low‐cost extended short‐wavelength infrared photodetectors are realized by coupling colloidal HgTe quantum dots to plasmonic In2O3:Sn,F nanocrystals. Localized surface plasmon resonances boost and spectrally tailor light absorption between 1500 and 3000 nm, enabling responsivities above 40 A W−1.
Kseniia A. Sergeeva, Anastasiia V. Sokolova, Chenxi Guo, Yuanfei Huo, Yulia V. Kuznetsova, Ran An, Aleksandr A. Sergeev, Kam Sing Wong, Tianshuo Zhao, Andrey L. Rogach   +9 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Junction Transistor Electronics

Students Quarterly Journal, 1959
By Richard B. Hurley London : Chapman and Hall Ltd. Pp. xvii + 473. Price 100s. The first chapter is aptly entitled " Low Level Semiconductor Physics" and again one is struck by the disparity between the wealth of excellent books on transistor circuit applications and the paucity of comprehensive works dealing with solid state theory from an elementary
openaire   +3 more sources

Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Nanoscale Research Letters, 2018
Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type
Junku Liu, Yangyang Wang, Xiaoyang Xiao, Kenan Zhang, Nan Guo, Yi Jia, Shuyun Zhou, Yang Wu, Qunqing Li, Lin Xiao   +9 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Transistor Electronics [PDF]

Students Quarterly Journal, 1959
  +4 more sources

The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility

Electronic Materials
In this study, we investigated the density of states extraction method for atomic-deposited ZnO thin-film transistors (TFTs) by analyzing gate-dependent field-effect mobility.
Minho Yoon
doaj   +1 more source