Results 81 to 90 of about 131,700 (298)

Harnessing the Orientation of Columnar Discotic Liquid Crystals for Narrowband Blue Emission with Enhanced Out‐Coupling Efficiency Toward Improvement of SP‐OLEDs Performance

open access: yesAdvanced Functional Materials, EarlyView.
Solution‐processed OLEDs containing discotic liquid‐crystalline MR‐TADF emitters are reported. Supramolecular self‐assembly induces homeotropic columnar alignment, enforcing preferential horizontal orientation of the emitter transition dipole moment in spin‐coated films, which leads to an enhancement in the device light outcoupling efficiency while ...
Joydip De   +6 more
wiley   +1 more source

Junction Transistor Electronics

open access: yesPhysics Bulletin, 1959
By Richard B. Hurley London : Chapman and Hall Ltd. Pp. xvii + 473. Price 100s. The first chapter is aptly entitled " Low Level Semiconductor Physics" and again one is struck by the disparity between the wealth of excellent books on transistor circuit applications and the paucity of comprehensive works dealing with solid state theory from an elementary
openaire   +3 more sources

Effects of Molecular Designs and Double‐Network Morphologies for Bioadhesive Semiconductors

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes molecular‐to‐mesoscale design rules for bioadhesive semiconducting polymers (BASCs). It identifies how side‐chain length, double‐network formation, and film thickness modulate adhesion strength and electronic performance, providing insight into the rational design of intrinsically adhesive semiconductors for stable and efficient ...
Zhichang Liu   +8 more
wiley   +1 more source

High-frequency characteristics of ultra-short gate MoS2 transistors

open access: yesApplied Physics Express
Short channel transistors are gaining attention for high-frequency applications. MoS _2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance.
Akiko Ueda   +2 more
doaj   +1 more source

Electronic structure and transport in amorphous metal oxide and amorphous metal oxy-nitride semiconductors

open access: yes, 2019
Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO)
Bhowmick, Somnath   +3 more
core   +1 more source

A power sharing series power BJT array with isolated low voltage control for AC power control applications [PDF]

open access: yes, 2006
A technique for a continuously variable AC resistance using a series BJT array is presented. This array provides high power dissipation capability and uniform voltage and power distribution across the individual transistors. The array, controlled using a
Cho, Paul, Kularatna, Nihal
core   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping [PDF]

open access: yesAPL Electronic Devices
A persistent challenge in transition metal dichalcogenide (TMD)-based transistors is the formation of a Schottky Barrier (SB) at the metal–TMD interface which introduces substantial contact resistance and degrades device performance.
Somaditya Santra   +5 more
doaj   +1 more source

Correlation between the static and dynamic responses of organic single-crystal field-effect transistors

open access: yesNature Communications, 2020
Though literature reports improvements in organic electronic device performance, understanding the correlation between static and dynamic device responses remains a challenge.
Taiki Sawada   +6 more
doaj   +1 more source

Hardening electronic devices against very high total dose radiation environments [PDF]

open access: yes, 1972
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B.   +3 more
core   +2 more sources

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