Results 91 to 100 of about 4,496 (248)

LLM‐Assisted Design of Ultralow‐κ$\kappa$ Chalcogenides

Advanced Science, EarlyView.
An AI assisted, physics guided workflow accelerates the discovery of ultralow thermal conductivity materials by combining Bayesian optimization, evidence conditioned LLM reasoning, and automated physics‐based validation. The framework uncovers dynamically stable Ag based chalcogenides with ultralow thermal conductivity and promising thermoelectric ...
Yujie Liu, Congran Jia, Yuzhou Hao, Xuejie Li, Yang Wang, Artem Oganov, Jun Sun, Xiangdong Ding, Turab Lookman, Zhibin Gao   +9 more
wiley   +1 more source

Transition Metal Chalcogenides for Wastewater Treatment

Rapid population expansion, industrialization, accelerated urbanization, and ineffective governmental policies in certain areas have heightened the expenditure of resources and diverse environmental practices contributing to water contamination. Several materials, including quantum dots, metal oxides, carbonaceous substances, and metal sulfides, have ...
Sawaira Moeen, Iram Shahzadi, Ali Haider, Anum Shahzadi, Muhammad Ikram, Mohammed Benali Kanoun, Souraya Goumri-Said   +6 more
openaire   +1 more source

Interfacial Reconstruction Enables Enhanced Thermoelectric Performance in Bismuth Telluride‐Based Alloys

Advanced Science, EarlyView.
Bismuth telluride‐based alloys are benchmark thermoelectric materials for near‐room‐temperature applications. Here, SnSe‐induced interfacial reconstruction simultaneously optimizes carrier and phonon transport in Bi0.4Sb1.6Te3, achieving a peak ZT of ∼1.38 at 363 K and a device efficiency of ∼6.47%, providing an effective strategy for high‐performance ...
Wenyi Chen, Xiao‐Lei Shi, Meng Li, Chao Zhang, Konstantin Faershteyn, Siqi Liu, Yongqi Chen, Chengjiong He, Wanyu Lyu, Jun Pei, Nanhai Li, Zhi‐Gang Chen   +11 more
wiley   +1 more source

Atomic Wires of Transition Metal Chalcogenides: A Family of 1D Materials for Flexible Electronics and Spintronics. [PDF]

JACS Au, 2021
Shang C, Fu L, Zhou S, Zhao J.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Recent Advances in Programmable Metasurfaces and Meta‐Devices

Advanced Electronic Materials, EarlyView.
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao, Chong He, Nan Wang, Liming Si, Weiren Zhu   +4 more
wiley   +1 more source

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

npj 2D Materials and Applications
Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost ...
Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal   +9 more
doaj   +1 more source

Ultra-sensitive multi-band infrared polarization photodetector based on 1T'-MoTe2/2H-MoTe2 van der Waals heterostructure

Opto-Electronic Advances
Near infrared polarized photodetectors are widely used, and van der Waals heterostructures based on transition metal dichalcogenides are important platforms for device research and application.
Yuting Pan, Lidan Lu, Bofei Zhu, Chunhua An, Jing Yu, Guanghui Ren, Jian Zhen Ou, Mingli Dong, Zheng You, Lianqing Zhu   +9 more
doaj   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Facile One‐Pot Solvothermal Synthesis of Bi2Te3 Nanoplate/Te Nanorod Composites with High Seebeck Coefficients for Flexible Film‐Based Thermoelectric Generators

Advanced Electronic Materials, EarlyView.
A one‐pot solvothermal reaction yields Bi2Te3 nanoplate/Te nanorod composites, in which the antimony precursor regulates crystallite size without lattice incorporation. Drop‐cast flexible films reach Seebeck coefficients of −127 and 323 µV K−1 at 393 K, and a flexible thermoelectric generator produces 6.2 mV at a temperature difference of 5.6 K ...
Keisuke Kaneko, Keisuke Uchida, Yoshiyuki Shinozaki, Hiroto Nakayama, Shuya Ochiai, Shugo Miyake, Masayuki Takashiri   +6 more
wiley   +1 more source