Results 11 to 20 of about 4,496 (248)

Two‐dimensional magnetic transition metal chalcogenides [PDF]

SmartMat, 2021
The field of two‐dimensional (2D) magnets has expanded rapidly during the past several years since the first demonstration of intrinsic 2D magnetism in atomically thin CrI3 and Cr2Ge2Te6 in 2017.
Yu Li Huang, Wei Chen, Andrew T. S. Wee
doaj   +2 more sources

Transition metal chalcogenides for next-generation energy storage. [PDF]

Nanoscale Adv, 2023
Transition-metal chalcogenide nanostructures provide a unique material platform to engineer next-generation energy storage devices such as lithium-ion, sodium-ion, and potassium-ion batteries and flexible supercapacitors.
Palchoudhury S, Ramasamy K, Han J, Chen P, Gupta A.   +4 more
europepmc   +5 more sources

Shining a light on transition metal chalcogenides for sustainable photovoltaics. [PDF]

Chem Sci, 2017
Transition metal chalcogenides are an important family of materials that have received significant interest in recent years as they have the potential for diverse applications ranging from use in electronics to industrial lubricants.
Matthews PD, McNaughter PD, Lewis DJ, O'Brien P.   +3 more
europepmc   +4 more sources

Amorphous As₂S₃ Doped with Transition Metals: An Ab Initio Study of Electronic Structure and Magnetic Properties

Nanomaterials, 2023
Crystalline transition-metal chalcogenides are the focus of solid state research. At the same time, very little is known about amorphous chalcogenides doped with transition metals.
Vladimir G. Kuznetsov, Anton A. Gavrikov, Milos Krbal, Vladimir A. Trepakov, Alexander V. Kolobov   +4 more
doaj   +1 more source

Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Nanomaterials, 2023
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials
Hongtao Ren, Gang Xiang
doaj   +1 more source

Band Gap Closure in MnS under Pressure

Engineering Proceedings, 2022
Manganese chalcogenides are being actively studied both experimentally and theoretically because of the metal-to-insulator transition under pressure and possible catalytic, optical and magnetic applications [...]
Evgeniy Chernov, Alexey Lukoyanov
doaj   +1 more source

Metal Chalcogenides (M x E y ; E = S, Se, and Te) as Counter Electrodes for Dye–Sensitized Solar Cells: An Overview and Guidelines

Advanced Energy & Sustainability Research, 2021
The dye‐sensitized solar cell (DSSC), a third‐generation photovoltaic technology, has gained considerable attention since the achievement of around 7% efficiency in 1991.
Arnauld Robert Tapa, Wanchun Xiang, Xiujian Zhao   +2 more
doaj   +1 more source

A mini-review of noble-metal-free electrocatalysts for overall water splitting in non-alkaline electrolytes

Materials Reports: Energy, 2021
Development of noble-metal-free materials with remarkable electrocatalytic water-splitting performance in acidic or neutral media has sparked considerable attention in recent years.
Jie Yu, Yawen Dai, Qijiao He, Dongqi Zhao, Zongping Shao, Meng Ni   +5 more
doaj   +1 more source

Transition-metal substitutions in iron chalcogenides [PDF]

Physical Review B, 2015
The $ab$-plane resistivity and Hall effect are studied in Fe$_{1-y}$M$_y$Te$_{0.65}$Se$_{0.35}$ single crystals doped with two transition metal elements, M = Co or Ni, over a wide doping range, $0 \leq y \leq 0.2$. The superconducting transition temperature, $T_{c}$, reaches zero for Co at $y \simeq 0.14$ and for Ni at $y \simeq 0.032$, while the ...
Bezusyy, V. L., Gawryluk, D. J., Malinowski, A., Cieplak, Marta Z.   +3 more
openaire   +2 more sources

Insulator–metal transition in CrSiTe3 triggered by structural distortion under pressure

npj 2D Materials and Applications, 2023
van der Waals solids are well known to host remarkable phase diagrams with competing phases, unusual energy transfer processes, and elusive states of matter.
J. L. Musfeldt, D. G. Mandrus, Z. Liu
doaj   +1 more source