Results 101 to 110 of about 3,555,977 (303)

Mild Covalent Functionalization of Transition Metal Dichalcogenides with Maleimides: A “Click” Reaction for TMDCs [PDF]

, 2018
The physical properties of ultrathin transition metal dichalcogenides (2D-TMDCs) make them promising candidates as active nanomaterials for catalysis, optoelectronics, and biomedical applications.
Mariano, Vera-Hidalgo, Emerson, Giovanelli, Emilio, Pérez, Cristina, Navío   +3 more
core   +2 more sources

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Role of chalcogen atoms in in situ exfoliation of large-area 2D semiconducting transition metal dichalcogenides

Frontiers in Nanotechnology
Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising platform for next-generation optoelectronic and spintronic devices. Mechanical exfoliation using adhesive tape remains the dominant method for preparing 2D materials of ...
Zhiying Dan, Ronak Sarmasti Emami, Giovanna Feraco, Melina Vavali, Melina Vavali, Dominic Gerlach, Martin F Sarott, Martin F Sarott, Yindi Zhu, Petra Rudolf, Antonija Grubišić-Čabo   +10 more
doaj   +1 more source

Investigating and manipulating electronic transport properties of intercalated transition metal dichalcogenides

This thesis explores the electronic transport properties of devices based on two-dimensional transition metal dichalcogenides. By developing and optimising fabrication techniques, effective strategies were established for measuring these layered ...
Guimaraes, Jose Joao
core   +1 more source

Polarization-Driven Edge-State Transport in Transition-Metal Dichalcogenides [PDF]

, 2020
Intrinsic polarization has been demonstrated in layered structures to reduce the energy gap. Here we demonstrate that strain-induced polarization can increase the energy gap and induce a metallic-to-semiconducting phase transition in zigzag nanoribbons ...
Lijie Li
core   +1 more source

Tailoring Symmetry Breaking in Engineered van der Waals Superlattices

Advanced Materials, EarlyView.
We pioneer a scheme to tailor superpotentials in graphene based on intrinsic substrate electronic orders rather than twist angle. The resulting superpotential folds graphene's Dirac cones to either Γ$\Gamma$ or K‐points, leading to distinct symmetry behaviors.
Keda Jin, Lennart Klebl, Zachary A. H. Goodwin, Junting Zhao, Felix Lüpke, Dante M. Kennes, Jose Martinez‐Castro, Markus Ternes   +7 more
wiley   +1 more source

Unconventional Superconductivity in Bilayer Transition Metal Dichalcogenides

Physical Review Letters, 2017
Bilayer transition metal dichalcogenides (TMDs) belong to a class of materials with two unique features, the coupled spin-valley-layer degrees of freedom and the crystal structure that is globally centrosymmetric but locally non-centrosymmetric. In this work, we will show that the combination of these two features can lead to a rich phase diagram for ...
openaire   +4 more sources

Incommensurate transition-metal dichalcogenides via mechanochemical reshuffling of binary precursors

, 2021
A new family of heterostructured transition-metal dichalcogenides (TMDCs) with incommensurate (“misfit”) spatial arrangements of well-defined layers was prepared from structurally dissimilar single-phase 2H-MoS(2) and 1T-HfS(2) materials.
Malynych, Serhiy Z., Pecharsky, Vitalij, Johnson, Duane, Singh, Prashant, Gamernyk, Roman V., Pathak, Arjun K., Dolotko, Oleksandr, Hlova, Ihor Z., Gamernyk, Roman, Hlova, Ihor, Balema, Viktor P., Pathak, Arjun, Pecharsky, Vitalij K., Johnson, Duane D., Balema, Viktor, Malynych, Serhiy, Arroyave, Raymundo   +16 more
core   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source