Results 81 to 90 of about 44,249 (326)
Advanced Science, 2021 This paper shows how terahertz light can drive ultrafast topological phase transitions in monolayer transition metal dichalcogenides (TMDs). The phase transition is induced by the light interaction with both electron and phonon subsystems in the material.
Jian Zhou +3 more
doaj +1 more source
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Advanced Functional Materials, EarlyView.Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source
Valley excitons in two-dimensional semiconductors
, 2015 Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring optoelectronic applications;
Cui, Xiaodong +3 more
core +1 more source
Advanced Functional Materials, EarlyView.Efficient two‐photon resonant Raman scattering (TRRS) is observed in the layered perovskite (PEA)2PbI4, with the biexciton level acting as an intermediate state. TRRS undergoes two‐photon frequency shift upon input frequency tuning, persists up to 90 K, and shows clear threshold behavior and polarization selection rules.
Seung Han Shin +7 more
wiley +1 more source
Tracing Sub‐Monolayer Contamination on Wafer‐Scale 2D Materials
Advanced Functional Materials, EarlyView.Sub‐monolayer adventitious carbon contamination limits the performance and reproducibility of 2D material‐based devices. This study demonstrates scanning helium microscopy (SHeM) as a non‐destructive, ultra‐sensitive tool for wafer‐scale imaging of surface cleanliness.
Chenyang Zhao +7 more
wiley +1 more source
Configurational electronic states in layered transition metal dichalcogenides
New Journal of Physics, 2019 Mesoscopic irregularly ordered and even amorphous self-assembled electronic structures were recently reported in two-dimensional metallic dichalcogenides (TMDs), created and manipulated with short light pulses or by charge injection. Apart from promising
Jaka Vodeb +8 more
doaj +1 more source
High‐Throughput Exfoliation of Optoelectronic‐Grade MoS2 via Turbulent‐Flow Wet Jet Milling
Advanced Functional Materials, EarlyView.A scalable wet jet milling exfoliation method is demonstrated for producing optoelectronic‐grade MoS2 nanosheets using environmentally friendly ethyl cellulose in ethanol dispersion media. Guided by fluid dynamics modeling, this approach is optimized to achieve record‐high exfoliation throughput and concentration.
Maryam Khalaj +7 more
wiley +1 more source
Non-invasive digital etching of van der Waals semiconductors
Nature Communications, 2022 Here, the authors exploit a non-invasive layer-bylayer etching technique to fabricate electronic devices based on 2D transition metal dichalcogenides with controlled thickness and transport properties comparable to those of exfoliated flakes.
Jian Zhou +18 more
doaj +1 more source
, 2014 We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric ...
Alicea +27 more
core +2 more sources
Exciton dynamics in monolayer transition metal dichalcogenides
Journal of the Optical Society of America B, 2016 Since the discovery of semiconducting monolayer transition metal dichalcogenides, a variety of experimental and theoretical studies have been carried out seeking to understand the intrinsic exciton population decay and valley relaxation dynamics. Reports of the exciton decay time range from hundreds of femtoseconds to ten nanoseconds, while the valley ...
Moody, Galan +2 more
openaire +3 more sources