Results 61 to 70 of about 10,215 (258)

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Terahertz Driven Reversible Topological Phase Transition of Monolayer Transition Metal Dichalcogenides

Advanced Science, 2021
This paper shows how terahertz light can drive ultrafast topological phase transitions in monolayer transition metal dichalcogenides (TMDs). The phase transition is induced by the light interaction with both electron and phonon subsystems in the material.
Jian Zhou, Haowei Xu, Yongliang Shi, Ju Li   +3 more
doaj   +1 more source

Directional Flow of Confined Polaritons in CrSBr

Advanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak, Sichao Yu, Jaime Abad‐Arredondo, Biswajit Datta, Andy Cruz, Sorah Fischer, Kseniia Mosina, Zdeněk Sofer, Antonio I. Fernández‐Domínguez, Francisco J. Garcia‐Vidal, Vinod M. Menon   +10 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Configurational electronic states in layered transition metal dichalcogenides

New Journal of Physics, 2019
Mesoscopic irregularly ordered and even amorphous self-assembled electronic structures were recently reported in two-dimensional metallic dichalcogenides (TMDs), created and manipulated with short light pulses or by charge injection. Apart from promising
Jaka Vodeb, Viktor V Kabanov, Yaroslav A Gerasimenko, Rok Venturini, Jan Ravnik, Marion A van Midden, Erik Zupanic, Petra Sutar, Dragan Mihailovic   +8 more
doaj   +1 more source

Measuring the Hall Effect in Hysteretic Materials

Advanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya, Anthony Voyemant, Sudipta Chatterjee, Scott B. Lee, Grigorii Skorupskii, Connor J. Pollak, Leslie M. Schoop   +6 more
wiley   +1 more source

Strain effects on phase transitions in transition metal dichalcogenides [PDF]

Current Applied Physics, 2019
We perform density functional theory calculation to investigate the structural and electronic properties of various two-dimensional transition metal dichalcogenides, MX$_2$ (M$=$Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W, and X$=$S or Se), and their strain-induced phase transitions.
Seoung-Hun Kang, Young-Kyun Kwon
openaire   +2 more sources

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Non-invasive digital etching of van der Waals semiconductors

Nature Communications, 2022
Here, the authors exploit a non-invasive layer-bylayer etching technique to fabricate electronic devices based on 2D transition metal dichalcogenides with controlled thickness and transport properties comparable to those of exfoliated flakes.
Jian Zhou, Chunchen Zhang, Li Shi, Xiaoqing Chen, Tae Soo Kim, Minseung Gyeon, Jian Chen, Jinlan Wang, Linwei Yu, Xinran Wang, Kibum Kang, Emanuele Orgiu, Paolo Samorì, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi, Peng Wang, Yi Shi, Songlin Li   +18 more
doaj   +1 more source

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source