Results 61 to 70 of about 44,249 (326)

Topological superconductivity in monolayer transition metal dichalcogenides

open access: yesNature Communications, 2017
Conditions to realize topological superconductivity have long been known, but the materialization remains rare. Here, Hsuet al. report a strategy towards possible topological superconductivity in monolayer hole-doped transition metal dichalcogenide by ...
Yi-Ting Hsu   +3 more
doaj   +1 more source

Bridging the gap between atomically thin semiconductors and metal leads

open access: yesNature Communications, 2022
Barrier-free metal-semiconductor interfaces are crucial to improve the performance of 2D electronic devices. Here, the authors report a strategy to induce local bonding distortion in 2D transition metal dichalcogenides via soft oxygen plasma treatments ...
Xiangbin Cai   +18 more
doaj   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

Color Routing and Beam Steering of Single‐Molecule Emission with a Spherical Silicon Nanoantenna

open access: yesAdvanced Functional Materials, EarlyView.
We experimentally demonstrate broadband directional emission from single molecules using a single spherical silicon nanoparticle assembled via DNA origami. By varying nanoparticle (NP) size and emitter position, we achieve unidirectional emission, beam steering, and color routing at the nanoscale, revealing modal interference as the underlying ...
María Sanz‐Paz   +9 more
wiley   +1 more source

Phonon-mediated exciton capture in Mo-based transition metal dichalcogenides

open access: yesPhysical Review Research, 2020
Localized excitons play a vital role in the optical response of monolayers of transition metal dichalcogenides and can be exploited as single photon sources for quantum information technology.
F. Lengers, T. Kuhn, D. E. Reiter
doaj   +1 more source

Exciton-phonon relaxation bottleneck and radiative decay of thermal exciton reservoir in two-dimensional materials

open access: yes, 2016
We study exciton radiative decay in a two-dimensional material, taking into account large thermal population in the non-radiative states, from which excitons are scattered into the radiative states by acoustic phonons.
Basko, D. M., Slobodeniuk, A. O.
core   +3 more sources

Anomalous Pressure‐Temperature Ultrahigh Sensitivities in Atomically Engineered Carbonitride MXenes for Multifunctional Wearable Human–Machine Interfaces: Joint Computational–Experimental Elucidations

open access: yesAdvanced Functional Materials, EarlyView.
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra   +12 more
wiley   +1 more source

Exciton ionization in multilayer transition-metal dichalcogenides

open access: yesNew Journal of Physics, 2016
Photodetectors and solar cells based on materials with strongly bound excitons rely crucially on field-assisted exciton ionization. We study the ionization process in multilayer transition-metal dichalcogenides (TMDs) within the Mott-Wannier model ...
Thomas Garm Pedersen   +4 more
doaj   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

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