Results 161 to 170 of about 44,249 (326)
Advanced Science, EarlyView.This groundbreaking contribution to water electrolysis demonstrates that MoSe2/PANI electrocatalysts with a P–N heterojunction effectively balance the overall electrolysis reaction as the cathode, enhance anode performance, and achieve high‐efficiency, low‐energy, simultaneous hydrogen and oxygen production, revealing that the P–N heterojunction ...
Kumasser Kusse Kuchayita +2 more
wiley +1 more source
Advanced Science, EarlyView.This work proposes a high static magnetic field (HSMF) driven dual‐low‐dimension strategy for fabricating magnetic‐dielectric heterostructure (Fe3O4@MoS2) chains with programmable lengths. The constructed successive magnetic‐dielectric synergy, arising from uniaxial anisotropy‐enhanced magnetic response and abundant heterointerfaces that boost ...
Zhuolin Li +5 more
wiley +1 more source
Edge states and spin-valley edge photocurrent in transition metal dichalcogenide monolayers [PDF]
, 2017 V. V. Enaldiev
openalex +1 more source
Direct probing of phonon mode specific electron–phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides [PDF]
, 2021 Duk Hyun Lee +4 more
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Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
Advanced Electronic Materials, Volume 11, Issue 6, May 2025.A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Robust parity-mixed superconductivity in disordered monolayer transition metal dichalcogenides [PDF]
, 2018 David Möckli, Maxim Khodas
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Advanced Electronic Materials, EarlyView.This study examines metal–perovskite interfaces in 2D (BA)2PbBr4 and (PEA)2PbBr4 using first‐principles and NEGF methods. It compares top‐ and edge‐contact configurations, revealing Schottky barriers in top contacts and ohmic behavior in edge contacts.
Xinbiao Wang +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner +15 more
wiley +1 more source
Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo +11 more
wiley +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source