Results 181 to 190 of about 3,555,977 (303)
Dissecting intervalley coupling mechanisms in monolayer transition metal dichalcogenides. [PDF]
Dogadov O +10 more
europepmc +1 more source
MONOLAYERS OF TRANSITION METAL DICHALCOGENIDES AND CONJUGATED ORGANIC MATERIALS INTERFACES WITH NOVEL OPTO-ELECTRONIC PROPERTIES Monolayers of Transition Metal Dichalcogenides and Conjugated Organic Materials Interfaces with Novel Opto-electronic ...
Wang, Qiang
core
Enhancing Quasi‐Two‐Dimensional Electronic Structure in Bi2O2Se via Chlorine Substitution
We demonstrate chlorine substitution as an effective strategy to transform Bi2O2Se into an exfoliatable van der Waals superlattice. Key electronic band feature, including indirect bandgap, effective mass is well preserved, while the 2D character of the system is sufficiently enhanced.
Yong‐Zhen Jiang +19 more
wiley +1 more source
Single-Metal-Atom Chains at Mirror Twin Boundaries in Transition Metal Dichalcogenides: Electronic, Magnetic, and Catalytic Properties. [PDF]
Santra P +3 more
europepmc +1 more source
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei +6 more
wiley +1 more source
Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen +8 more
wiley +1 more source
Quantum phases in twisted homobilayer transition metal dichalcogenides. [PDF]
Li B, Qiu WX, Wu F, MacDonald AH.
europepmc +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
γ Radiation Effects on Transition Metal Dichalcogenides: A Review of Defect Mechanisms and Device Implications. [PDF]
Kreusch D, Araujo-Moreira FM.
europepmc +1 more source
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler +4 more
wiley +1 more source

