Results 51 to 60 of about 36,290 (265)

Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides

, 2012
Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure.
Bhattacharyya, Swastibrata, Singh, Abhishek K.   +1 more
core   +1 more source

Boosting quantum yields in two-dimensional semiconductors via proximal metal plates

Nature Communications, 2021
The short exciton lifetime and strong exciton-exciton interaction in transition metal dichalcogenides limit the efficiency of exciton emission. Here, the authors show that exciton-exciton interaction in monolayer WS2 can be screened using proximal metal ...
Yongjun Lee, Johnathas D’arf Severo Forte, Andrey Chaves, Anshuman Kumar, Trang Thu Tran, Youngbum Kim, Shrawan Roy, Takashi Taniguchi, Kenji Watanabe, Alexey Chernikov, Joon I. Jang, Tony Low, Jeongyong Kim   +12 more
doaj   +1 more source

Nanophotonics with 2D Transition Metal Dichalcogenides

, 2018
Two-dimensional transition metal dichalcogenides (TMDCs) have recently become attractive semiconductor materials for several optoelectronic applications, such as photodetection, light harvesting, phototransistors, light-emitting diodes, and lasers.
Alú, Andrea, Krasnok, Alex, Lepeshov, Sergey   +2 more
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Bridging the gap between atomically thin semiconductors and metal leads

Nature Communications, 2022
Barrier-free metal-semiconductor interfaces are crucial to improve the performance of 2D electronic devices. Here, the authors report a strategy to induce local bonding distortion in 2D transition metal dichalcogenides via soft oxygen plasma treatments ...
Xiangbin Cai, Zefei Wu, Xu Han, Yong Chen, Shuigang Xu, Jiangxiazi Lin, Tianyi Han, Pingge He, Xuemeng Feng, Liheng An, Run Shi, Jingwei Wang, Zhehan Ying, Yuan Cai, Mengyuan Hua, Junwei Liu, Ding Pan, Chun Cheng, Ning Wang   +18 more
doaj   +1 more source

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Topological superconductivity in monolayer transition metal dichalcogenides

Nature Communications, 2017
Conditions to realize topological superconductivity have long been known, but the materialization remains rare. Here, Hsuet al. report a strategy towards possible topological superconductivity in monolayer hole-doped transition metal dichalcogenide by ...
Yi-Ting Hsu, Abolhassan Vaezi, Mark H. Fischer, Eun-Ah Kim   +3 more
doaj   +1 more source

Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

Nature Communications, 2022
The large-area growth of 2D transition metal dichalcogenides (TMDs) requires a precise control of metal and chalcogen precursors. Here, the authors implement a strategy using active chalcogen monomer supply to grow monolayer TMDs and their alloys ...
Yonggang Zuo, Can Liu, Liping Ding, Ruixi Qiao, Jinpeng Tian, Chang Liu, Qinghe Wang, Guodong Xue, Yilong You, Quanlin Guo, Jinhuan Wang, Ying Fu, Kehai Liu, Xu Zhou, Hao Hong, Muhong Wu, Xiaobo Lu, Rong Yang, Guangyu Zhang, Dapeng Yu, Enge Wang, Xuedong Bai, Feng Ding, Kaihui Liu   +23 more
doaj   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

High-specific-power flexible transition metal dichalcogenide solar cells

Nature Communications, 2021
Ultrathin transition metal dichalcogenides (TMDs) hold promise for next-generation lightweight photovoltaics. Here, the authors demonstrate the first flexible high power-per-weight TMD solar cells with notably improved power conversion efficiency.
Koosha Nassiri Nazif, Alwin Daus, Jiho Hong, Nayeun Lee, Sam Vaziri, Aravindh Kumar, Frederick Nitta, Michelle E. Chen, Siavash Kananian, Raisul Islam, Kwan-Ho Kim, Jin-Hong Park, Ada S. Y. Poon, Mark L. Brongersma, Eric Pop, Krishna C. Saraswat   +15 more
doaj   +1 more source