Results 101 to 110 of about 111,836 (293)
Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework
Advanced Functional Materials, EarlyView.The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu +13 more
wiley +1 more source
Transmission Line Defect Detection Algorithm Based on Improved YOLOv12
To address the challenges of high missed detection rates for minute transmission line defects, strong complex background interference, and limited computational power on edge devices in UAV-assisted power line inspection, this paper proposes a ...
Hongliang Shen +6 more
core +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Advanced Functional Materials, EarlyView.We propose a suture‐complementary approach that integrates optical skin clearing with a strain‐programmable luminescent adhesive patch. Hyaluronic acid promotes transdermal delivery of tartrazine to improve optical clearing and stabilizes its interaction with a photosensitizer. Optical clearing increases the penetration depth of visible light into skin,
Seong‐Jong Kim +6 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN
Advanced Functional Materials, EarlyView.Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk +6 more
wiley +1 more source
Selective metal deposition at graphene line defects by atomic layer deposition
, 2014 One-dimensional defects in graphene have a strong influence on its physical properties, such as electrical charge transport and mechanical strength.
Bent, Stacey F. +9 more
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Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Advanced Functional Materials, EarlyView.Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors
, 2000 Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application.
Wu J +2 more
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