Results 271 to 280 of about 182,467 (340)

Effect of NaCl on the luminescent behavior of CsI thin films. [PDF]

RSC Adv
Singh S, Wen X, Yang F.
europepmc   +1 more source

Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at millikelvin temperatures

Shu-Hao Wu, Xinzhu Li, Ian Gallagher, Benjamin J. Lawrie, Hailin Wang   +4 more
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Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes. [PDF]

Sci Rep
Kinstler AD, Neumann R, Taylor AA, Besendörfer S, Meissner E, Weingärtner R, Brunner F, Brusaterra E, Bahat Treidel E, Schulze J.   +9 more
europepmc   +1 more source

High discrimination infrared polarimetry via intrinsic anisotropic photogating in black phosphorus meta-polarization detectors. [PDF]

Nat Commun
Bu Y, Ye T, Wang R, Zhou J, Deng J, Zhen Y, Shi M, Jing W, Xin R, Zhang Y, Huang J, Li T, Lu W, Chen X.   +13 more
europepmc   +1 more source

Enhanced Optoelectronic Synaptic Performance in Sol-Gel Derived Al-Doped ZnO Thin Film Devices. [PDF]

Materials (Basel)
Jeon D, Lee SH, Lee SN.
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Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. [PDF]

Micromachines (Basel)
Cao Y, Zhang Z, Zhang L, Li M, Su S, Zhang W, Xu Y, Huang D, Liu L, Lv L, Ma X.   +10 more
europepmc   +1 more source

Dynamics of disorder in mixed ionic-electronic transport in cross-linked non-conjugated redox polymers.

Mater Horiz
Herzhoff R, Plein L, Troisi A, Meerholz K, Fazzi D.   +4 more
europepmc   +1 more source

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Trap centers in molybdates

Optical Materials, 2013
Charge carrier trapping centers have been studied in molybdates CaMoO4, SrMoO4 and PbMoO4 with the scheelite crystal structure as well as in ZnMoO4, which crystallize in a-ZnMoO4 structural type. The trap parameters such as activation energies and frequency factors have been determined.
Spassky, Dmitry, Nagirnyi, V., Zadneprovski, B. I., Mikhailin, Vitali, Savon, Alexander, Belsky, A. N., Laguta, V. V., Buryi, M., Galashov, E. N., Shlegel, V. N., Voronina, I. S.   +10 more
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Trap centers in cuprous oxide

Solid-State Electronics, 1988
Abstract The effect of annealing temperature on the trap density in Cu 2 O is investigated. From space charge limited current (SCLC), Hall effect and DLTS measurements it is demonstrated that there is a trap-band distribution with the Fermi level lying within the trap-band. The maximum of this trap-band distribution is just above the Fermi level.
L. Papadimitriou, C.A. Dimitriadis, L. Dozsa   +2 more
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