Results 31 to 40 of about 101,744 (75)

Trap centers in molybdates

Optical Materials, 2013
Charge carrier trapping centers have been studied in molybdates CaMoO4, SrMoO4 and PbMoO4 with the scheelite crystal structure as well as in ZnMoO4, which crystallize in a-ZnMoO4 structural type. The trap parameters such as activation energies and frequency factors have been determined.
Vitali Nagirnyi, B.I. Zadneprovski, V. V. Mikhailin, I.S. Voronina, Maksym Buryi, E.N. Galashov, A.E. Savon, V.N. Shlegel, V. Laguta, Dmitry A. Spassky, Dmitry A. Spassky, A. Belsky   +11 more
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Trap centers in cuprous oxide

Solid-State Electronics, 1988
Abstract The effect of annealing temperature on the trap density in Cu 2 O is investigated. From space charge limited current (SCLC), Hall effect and DLTS measurements it is demonstrated that there is a trap-band distribution with the Fermi level lying within the trap-band. The maximum of this trap-band distribution is just above the Fermi level.
Charalabos A. Dimitriadis, Lila Papadimitriou, László Dózsa   +2 more
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Trapping centers in inse single crystals

Materials Chemistry and Physics, 1983
Abstract A systematic investigation of centers acting in InSe single crystals has been carried out by means of the following electric and photoelectronic techniques: 1. a) Resistivity behaviour as a function of temperature, analyzed by the single donor-single acceptor model 2.
DI GIULIO, Massimo, MICOCCI, Gioacchino, RUGGIERO, Livio, TEPORE, Antonio, ZUANNI, Ferruccio   +4 more
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Copper in Germanium: Recombination Center and Trapping Center

Physical Review, 1956
The time-dependent photoconductivity of copper-doped $n$-type and $p$-type germanium bridges has been measured between 130\ifmmode^\circ\else\textdegree\fi{}K and 293\ifmmode^\circ\else\textdegree\fi{}K. Temporary hole traps were found in the $n$-type samples at the lower temperatures but no traps were observed in the $p$ type.
B. J. Wyluda, R. G. Shulman
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Traps and recombination centers in YALO3:Ce,Co

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
Abstract It has recently been noted that notorious underperfomance of YAlO 3 :Ce scintillator (25–30 ns scintillation decay time at room temperature instead of 17 ns) is caused by uncontrolled traps that accompany Ce radiative recombination centers. A possible way to improve the material is to introduce a second intentional dopant that would assume a
P. Bruyndonckx, D. Wiśniewski, D. Wiśniewski, M. Wiśniewska, M. Wiśniewska, Stefaan Tavernier, Piotr Szupryczynski, J. Głodo, Winicjusz Drozdowski, Tadeusz Łukasiewicz, Andrzej J. Wojtowicz, Z. Gałązka   +11 more
openaire   +4 more sources

Trapping of Hydrogen Molecules by M Centers

Journal of the Physical Society of Japan, 1973
Trapping of hydrogen molecules by M centers in KC1:U crystals has been investigated. The thermal bleaching of the M band converted optically from the F band was observed in the dark at 20, 30 and 40°C, and was explained by kinetic theory on diffusion of hydrogen molecules.
A Díaz-Góngora, C Ruiz Mejia
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Trapping center parameters in In6S7 crystals

Physica B: Condensed Matter, 2011
Abstract Thermally stimulated current measurements were carried out on In 6 S 7 single crystals in the temperature range of 10–225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c -axis of crystals. The analysis of the glow curve according to various methods,
Nizami Gasanly, Mehmet Işik
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The Trapping Centers of Electrons in Glass

1958
In connection with his theory of the electric breakdown of amorphous substances, Frohlich suggested that in the glass state there should be various shallow electron traps below the conduction band, characteristic of the network structure of glass. On analizing our previous work on the electrical breakdown of glass, we arrived at the same inference ...
Hazimu Kawamura, Takeo Kikuchi
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The trapping centers of holes in a-As2Se3

Solid State Communications, 2004
Abstract The density of the trapping centers and their capture radius for holes in a-As2Se3 are determined by analyzing the imaginary term of the modulated photocurrent. The light-induced changes in the imaginary term are also examined to study the influences of the photo structural changes to the density of states and to detect possible hole ...
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Charge Trapping Centers in Ferroelectric Ceramics

MRS Proceedings, 1992
ABSTRACTElectron paramagnetic resonance (EPR), photo-thermal deflection spectroscopy (PDS), and electrical measurements have been used to characterize as-received and UV-lluminated lead lanthanum zirconate titanate (PLZT) and PZT ceramics. Following optical illumination we observe the activation of positively charged Pb+3 and negatively charged Ti+3 ...
Bruce A. Tuttle, R. D. Nasby, Duane Dimos, Carleton H. Seager, William L. Warren   +4 more
openaire   +2 more sources