Results 61 to 70 of about 101,744 (75)

Electron trapping at positively charged centers in SiO2

Applied Physics Letters, 1975
Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10−13 cm2 at room temperature and at an average oxide field of about 7×105 V/cm.
T. H. Ning, C. M. Osburn, H. N. Yu
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Trapped hole centers in alkaline earth fluorides

Solid State Communications, 1968
Abstract We report effects of polarized bleaching light on the optical and e.p.r. spectra of VK centers in alkaline earth fluorides. The molecular axis of the VK center in these crystals is aligned along . We also report the presence of trapped hole centers in CaF2 with e.p.r. spectra similar to that of the VK center but with molecular axes close to
William Hayes, G.P. Summers, J.H. Beaumont, J.W. Twidell   +3 more
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Charge carrier trapping centers in synthetic diamond

Diamond and Related Materials, 1997
Abstract Investigations of electrically active defects in synthetic diamond have been performed with the use of the method of currents of thermally stimulated depolarization (TSD). It has been shown that the trapping centers with the most probable activation energy of E = 1.7−2.0 eV (the trapping cross section being S=10−13−10−15 cm−2) are the ...
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Kinetics of exciton trapping by monocoordinate reaction centers

Journal of Luminescence, 1992
Abstract A model of exciton migration and trapping in photosynthetic membranes is presented that differs from earlier models of hopping excitons on lattices. In the new model, the trap, which is the special pair of chlorophyll (Chl) molecules within the reaction center (RC), is assumed monocoordinate, i.e.
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On the Nature of Fluorescent Centers and Traps in Zinc Sulfide

Journal of The Electrochemical Society, 1953
The impurity levels in the energy diagram of a zinc sulfide phosphor are considered to be localized S2− levels lifted above the filled S2− band due to the presence of monovalent positive or trivalent negative activator ions in the lattice. Electron traps are formed similarly by the substitution of S ions by monovalent negative ions or of Zn2+ ions by ...
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Local Trapping Centers for Excitons in Molecular Crystals

1980
The neutral excited state energy Eμ (k) [cf. Sect.2.1] is determined by the topology of molecules in the crystal, since both dispersional (D) and resonance [ℰ μ (k)] interaction depend on the distance R between the excited molecule and the surrounding molecules of the lattice.
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DX-Center-Like Traps in AlGsSb

Extended Abstracts of the 1987 Conference on Solid State Devices and Materials, 1987
Akio Sasaki, Yoshikazu Takeda, Yu Zhu
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On the Aggregation of Trapping Centers in Semiconductors or Insulators

Physical Review, 1951
Tadatosi Hibi, Tetsuo Matsumura
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Two Trapping Centers in the Photoplastic Effect in CdS

Physica Status Solidi (a), 1988
Peter Haasen, J. M. Galligan
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Exciton self-trapping at an isoelectronic center in silicon

Physical Review B, 1994
E C Lightowlers, M. Zafar Iqbal, Gavin Davies   +2 more
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