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Photonic and Optoelectronic Devices and Systems, Third Edition. [PDF]
Micromachines (Basel)Butt MA.
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Atmospheric pressure plasma etching of Ti-6Al-4 V using SF<sub>6</sub> etchant. [PDF]
J Mater Sci Mater EngBishop A +5 more
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A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics. [PDF]
Micromachines (Basel)Liu Y, Bai F, Fang J.
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Seismotectonics at the Trench-Trench-Trench Triple Junction off Central Honshu
pure and applied geophysics, 1989We study earthquakes in and near the TTT type triple junction off Boso peninsula, central Honshu, to elucidate the plate interaction in this area. The Pacific, North America (northeast Japan) and Philippine Sea plates meet at the junction of the Japan and Izu-Bonin Trenches, and the Sagami Trough. We determine focal mechanisms using WWSSN data. We also
Tetsuzo Seno, Takashi Takano
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High-density trench DMOSFETs employing two step trench techniques and trench contact structure
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings., 2004A novel process technique for fabricating trench DMOSFETs using 3 mask layers (trench, poly, metal), two step trench technique, and trench contact structure is realized in order to obtain cost-effective production capability, higher cell density, and better leakage characteristics. A unit cell with a cell pitch of 1.6 /spl mu/m and a channel density of
null Jongdae Kim +3 more
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Trench-trench leakage current characteristics in the stacked trench capacitor (STT) cell
IEEE Transactions on Electron Devices, 1991Intercell leakage current characteristics of a stacked trench capacitor cell (STT) are investigated. The primary obstacle in downscaling the trench capacitor is the intercell leakage current caused by the parasitic field MOS transistor. This leakage current, called surface leakage current, is significantly reduced in the STT.
T. Hamamoto +4 more
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