Results 201 to 210 of about 899,728 (285)

Vanishing ordered moment in the frustrated triangular lattice antiferromagnet CuNdO<sub>2</sub>. [PDF]

open access: yesNPJ Quantum Mater
Gaudet J   +11 more
europepmc   +1 more source

Phase Diagrams Enable Solid‐State Battery Design

open access: yesAdvanced Materials Interfaces, EarlyView.
Batteries are non‐equilibrium devices with inherent thermodynamic driving forces to react at interfaces, regardless of kinetics or operating conditions. Chemical potential mismatches across interfaces are dissipated via interfacial reactions. In this work, it is illustrated how phase diagrams and chemical potential maps predict degradation pathways but
Nathaniel L. Skeele, Matthias T. Agne
wiley   +1 more source

Coupled Chemical and Mechanical Control of the Pore Size in Carbon Honeycomb Membranes for Water Desalination

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT The advancement of 3D carbon nanostructures for next‐generation desalination membranes is hindered by limited control of the pore size to ensure effective salt rejection. Chemical functionalization and mechanical modification are known approaches to address the problem, while the combined effect of the two approaches remains unexplored.
Aleksandr S. Voronin   +2 more
wiley   +1 more source

Plasma‐Sequence‐Engineered Atomic Layer Deposition of Ultra‐Thin SiNx for Enhanced Etching Resistance in Extreme Ultraviolet Pellicles

open access: yesAdvanced Materials Interfaces, EarlyView.
Plasma‐sequence‐engineered ALD (PSE‐ALD), based on sequential NH3 and N2 plasma pulses, enables ultrathin, dense SiNx films. ToF‐MS analysis confirms ligand removal via HCl evolution, while increased film density indicates network densification. The resulting SiNx coating provides robust protection of graphite under H2 plasma exposure.
Hye‐Young Kim   +7 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Impact of metal filings and acoustic waves on solar still performance. [PDF]

open access: yesSci Rep
Elwekeel FNM   +3 more
europepmc   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

open access: yesAdvanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Morphology and morphometry of the fundiform and suspensory ligaments of the penis in Thai population. [PDF]

open access: yesAnat Cell Biol
Wipaswatcharayotin P   +7 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy