Results 171 to 180 of about 83,965 (264)

Fabrication Process and Particle Dispersion Characteristics of W-PETG-Based 3D-Printed Composites for Medical Radiation Shielding. [PDF]

Polymers (Basel)
Kim SC.
europepmc   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source

Toward Efficient Hydrogen Production: Impact of Solid Solution of Tungsten on Nickel-Iron Hydroxide OER Catalysts. [PDF]

ACS Catal
Abbas L, Lakhanlal, Bhowmick S, Batheesh R, Elbaz L, Caspary Toroker M, Tsur Y.   +6 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene

Advanced Electronic Materials, EarlyView.
The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones, Youngju Park, Paulina Majchrzak, Kimberly Hsieh, Chakradhar Sahoo, Thomas S. Nielsen, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Yong P. Chen, Jeil Jung, Søren Ulstrup   +13 more
wiley   +1 more source

Mechanical, Thermal and X-Ray Shielding Properties of Lead-Free Composites of HDPE Filled with Metal-Based Powders. [PDF]

Polymers (Basel)
Alanazi S, Alshadokhi S, Alosime E, Almurayshid M, Alsuhybani M, Marashdeh M.   +5 more
europepmc   +1 more source

Printed Flexible WO3‐Based Supercapacitors for Powering Low‐Powered Electronics in Wearable Devices and Energy Autonomous Temperature Monitoring

Advanced Electronic Materials, EarlyView.
This study represents one of the systematic demonstrations of a screen‐printed, flexible WO3‐based supercapacitor, exhibiting excellent charge‐storage performance for powering wearable electronics. The device shows a specific capacitance of 3.44 F g−1 and an energy density of 0.302 Wh kg−1 at 0.05 mA, which enable to operate multiple wearable ...
Jithin Kanathedath, Adarsh Sivan Pillai, Febin Paul, Prasutha Rani Markapudi, Nazmi Sellami, Firdaus Muhammad‐Sukki, Libu Manjakkal   +6 more
wiley   +1 more source

Examination of kinetic components (pressure and time) of spark plasma sintering on the mechanical properties of WC/W FGM. [PDF]

Sci Rep
Vadeghani MA, Shafyei A, Najafabadi RA, Atapour M.   +3 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Peroxo-Containing Heteropolyanions [{XW₃O₇(O₂)₂}₂O]^6- (X = HPO₄^2-, HAsO₄^2-, CH₃AsO₃^2-): Synthesis, Structure, and Antibacterial Properties. [PDF]

Inorg Chem
Khandan S, Sarkar A, Pal A, Lüderitz FM, Kianihaftlang M, Ranga AK, Kiss L, Ullrich MS, Materny A, Silvestru C, Kortz U.   +10 more
europepmc   +1 more source