Results 191 to 200 of about 83,965 (264)

Stability of PEA2PbBr4 Thin‐Film Photodetectors under Thermal and Moisture Stress

open access: yesAdvanced Electronic Materials, EarlyView.
This study investigates the environmental durability of 2D perovskite photodetectors under extreme heat and humidity. While pristine films degrade in harsh environmental conditions, adding a halogen‐bonding agent significantly improves stability. This passivated device maintains stable performance in conditions mimicking space and solar applications ...
Sara Cepić   +3 more
wiley   +1 more source

X‐Ray TID Suppresses Inhibitory Plasticity of SnO‐Based Memristors and Its Impact on Neuromorphic Computation

open access: yesAdvanced Electronic Materials, EarlyView.
X‐ray irradiation suppresses inhibitory plasticity in SnO‐based volatile memristors, reducing nonlinearity and variability while improving neuromorphic learning accuracy. Despite a reduced dynamic range, irradiated devices achieve more stable and linear synaptic updates, leading to enhanced CNN performance.
Aiden Graham   +12 more
wiley   +1 more source

Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition

open access: yesAdvanced Electronic Materials, EarlyView.
Pulse‐protocol optimization in an Au/MoO3/TiO2/FTO bilayer memristor enables linear analog synaptic conductance modulation along with digital resistive switching for memory. Controlled filament evolution produces stable learning‐forgetting characteristics with low nonlinearity, resulting in significantly enhanced neural network inference accuracy for ...
Girish Chandrashekar   +2 more
wiley   +1 more source

Abrupt and Gradual Resistive Switching in Interface‐Modified IGZO Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
The indium gallium zinc oxide (IGZO) surface is modified with Ar‐plasma and ultraviolet ozone (UV‐O3) treatment. The W/IGZO/Pt memristors with Ar‐plasma treatment show forming‐free abrupt switching, whereas the UV‐O3‐treated device exhibits gradual switching, while both operate at voltages ≤1 V.
Krishna Rudrapal   +5 more
wiley   +1 more source

Home - About - Disclaimer - Privacy