Results 111 to 120 of about 4,163 (215)

Tailoring Symmetry Breaking in Engineered van der Waals Superlattices

Advanced Materials, EarlyView.
We pioneer a scheme to tailor superpotentials in graphene based on intrinsic substrate electronic orders rather than twist angle. The resulting superpotential folds graphene's Dirac cones to either Γ$\Gamma$ or K‐points, leading to distinct symmetry behaviors.
Keda Jin, Lennart Klebl, Zachary A. H. Goodwin, Junting Zhao, Felix Lüpke, Dante M. Kennes, Jose Martinez‐Castro, Markus Ternes   +7 more
wiley   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

Advanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan, Mitchell Kaiser, Maria L. Sushko, Xiaobin Liao, Hao Tang, Chun‐Chih Tseng, Matthew Yankowitz, Ying Xia, Jihui Yang, Jun Liu   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Band Alignment and Composition of the Buried TiO2/GaInP Interface

Advanced Materials Interfaces, EarlyView.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer, Sahar Shekarabi, Julius Kühne, Mohammad Amin Zare Pour, Kai Daniel Hanke, Chris Yannic Bohlemann, Juliane Koch, Oliver Bienek, Agnieszka Paszuk, Wolfram Jaegermann, Ian D. Sharp, Thomas Hannappel   +11 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Imide Substitution Drives the Supramolecular Assembly of Perylene Diimide Into Laterally Modulated Metallic/Semiconducting Molecular Patterns

Advanced Materials Interfaces, EarlyView.
Imide substitution with bulky 2,6‐isopropylphenyl groups induces perylene diimide to self‐assemble on Ag(111) into a monolayer with two coexisting adsorption heights. Molecules closer to the substrate gain metallic character due to charge transfer from the metal, while farther ones remain decoupled and semiconducting.
Giacomo Agnesod, Simone Pistillo, Davide Piva, Luca Schio, Daniele Toffoli, Davide Bidoggia, Maria Peressi, Alberto Morgante, Albano Cossaro, Luca Floreano, Giovanna Fronzoni, Martina Dell'Angela, Roberto Costantini   +12 more
wiley   +1 more source

Hierarchical Multi‐Material Architectures With Gradient Design for Dynamic‐Range Flexible Tactile Sensing

Advanced Materials Technologies, EarlyView.
Hierarchical multi‐material TPMS lattices are engineered as flexible tactile sensors by combining soft and stiff elastomeric layers with a conformal conductive coating. The bilayer architecture delivers sensitivity at low pressures while maintaining a broad detectable range under large loads, enabling reliable pressure and vibration monitoring for ...
Reza Noroozi, Domenic Quiquero, Yan Yan Shery Huang, HaoTian Harvey Shi   +3 more
wiley   +1 more source

Reconnaissance Peptide Labeling Grain Boundary of Chemically Grown MoS2 Polycrystalline Monolayer

Advanced Materials Technologies, EarlyView.
Self‐assembled peptides on substrates, through adsorption and aggregation, offer an alternative way to label grain boundaries in chemically grown single‐layer polycrystalline MoS2. During an early nucleation step, peptides preferentially bind to grain boundaries.
Linhao Sun, Jinhua Hu
wiley   +1 more source