Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs). [PDF]
Dahal BR +4 more
europepmc +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium. [PDF]
Yoshida A +3 more
europepmc +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Development and Research of a Theoretical Model of the Magnetic Tunnel Junction. [PDF]
Polyakov O +6 more
europepmc +1 more source
Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
Constant amplitude driving of a radiofrequency excited plasmonic tunnel junction. [PDF]
Doležal J, Merino P, Švec M.
europepmc +1 more source
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang +7 more
wiley +1 more source
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun +4 more
wiley +1 more source
High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing. [PDF]
Luo Z +11 more
europepmc +1 more source

