Results 91 to 100 of about 12,308 (221)

Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

AIP Advances, 2015
The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable ...
Q. L. Ma, X. M. Zhang, T. Miyazaki, S. Mizukami   +3 more
doaj   +1 more source

A Spin‐Texture Spin‐Valves With Van Der Waals Magnets

Advanced Science, EarlyView.
ABSTRACT All‐electrical methods for nucleating, detecting, and manipulating spin textures in 2D van der Waals (vdW) magnets can serve as fundamental building blocks for multi‐state spintronic memory, logic, and neuromorphic computing applications.
Bing Zhao, Roselle Ngaloy, Lars Sjöström, Saroj P. Dash   +3 more
wiley   +1 more source

Flexible magnetic films and spintronic devices

npj Spintronics
The rapid evolution of wearable and implantable electronics has driven the development of flexible magnetoelectronic devices that integrate mechanical adaptability with robust magnetic functionality.
Guohao Bo, Xiaoguang Xu, Kangkang Meng, Yong Wu, Yong Jiang   +4 more
doaj   +1 more source

Nonequilibrium spin distribution in single-electron transistor

, 1998
Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current.
A. Milner, A. N. Korotkov, A. N. Korotkov, Alexander N. Korotkov, D. Lubzens, D. V. Averin, J. Barnaś, J. C. Slonczewski, J. S. Helman, J. S. Moodera, J. S. Moodera, K. K. Likharev, K. Majumdar, K. Ono, K. Ono, K. Ono, L. F. Schelp, M. Johnson, M. Johnson, M. Julliere, R. Meservey, S. Sankar, S. Takahashi, V. I. Safarov   +23 more
core   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials, EarlyView.
A concealable physical unclonable function (PUF) based on an array of 384 nanoscale voltage‐controlled magnetic tunnel junctions is demonstrated. The PUF operates without any external magnetic field. It uses a combination of deterministic and stochastic switching mechanisms, based on the spin transfer torque and voltage‐controlled magnetic anisotropy ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
wiley   +1 more source

Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

, 1999
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated.
A. Brataas, A. Brataas, A. Korotkov, A. Korotkov, Arne Brataas, D. V. Averin, D. V. Averin, G. D. Mahan, G. Schön, G.-L. Ingold, H. Imamura, J. Barnas, J. E. Hirsh, J. S. Moodera, J. S. Moodera, K. Ono, L. F. Schelp, M. Büttiker, M. Julliere, P. Joyez, P. M. Levy, S. Chakravarty, S. Sankar, S. Takahashi, X. H. Wang, X. H. Wang, X. H. Wang   +26 more
core   +3 more sources

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

, 2005
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that
Buhrman, R. A., Fuchs, G. D., Katine, J. A., Kiselev, S. I., Mauri, D., Ralph, D. C., Wooley, K. S.   +6 more
core   +1 more source