Results 111 to 120 of about 12,308 (221)
Tunnel Magnetoresistance Sensor with AC Modulation and Impedance Compensation for Ultra-Weak Magnetic Field Measurement. [PDF]
Zhao W, Tao X, Ye C, Tao Y.
europepmc +1 more source
The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency
Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu +6 more
wiley +1 more source
Abstract Soft robots, engineered from highly compliant materials, offer superior adaptability and safety in unstructured environments compared to their rigid counterparts. Recent advancements, fueled by bio‐inspiration and material programmability, have led to the rapid co‐evolution of their core modules: actuation, sensing, protection, energy, and ...
Qiulei Liu +3 more
wiley +1 more source
The angle-dependent tunnel magnetoresistance (TMR) is studied in double-barrier magnetic tunnel junctions with a central layered antiferromagnet (DB-MTJs-AF).
Nader Ghobadi +2 more
doaj +1 more source
Tunnel Magnetoresistive Effect in Nanostructured Composite Systems
The results of the investigation of tunnel magnetoresistive effect in a large number of metal-dielectric nanocomposites obtained by the same technology and under identical conditions are presented.
Stognei O.V. +2 more
doaj +1 more source
Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He +9 more
wiley +1 more source
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions
Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier ...
Fen Liu +5 more
doaj +1 more source
Enhancing and decoupling magnetic anisotropy and tunnel magnetoresistance in CoFe2O4/MgO bilayers via swift heavy ion irradiation [PDF]
Magnetic tunnel junctions (MTJs) formed by CoFe2O4 and MgO are key components to form memory elements in magnetic random access memory (MRAM) for high-density data storage applications.
Ritika Charak +4 more
doaj +1 more source
Tunneling magnetoresistance in Si nanowires
We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible
Montes Muñoz, Enrique +3 more
openaire +4 more sources
Inducing surface‐near magnetic particle transport inside a static liquid via an engineered, dynamic potential energy landscape, different chemical surface properties of otherwise identical particles can be distinguished using simple optical observation.
Yahya Shubbak +5 more
wiley +1 more source

