Results 121 to 130 of about 12,308 (221)

Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

AIP Advances, 2019
In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR).
Y. Goto, T. Yanase, T. Shimada, M. Shirai, T. Nagahama   +4 more
doaj   +1 more source

Large Unsaturated Magnetoresistance in Gated MoS2 Flakes

Small, EarlyView.
Magnetotransport investigation of layered MoS2 crystals in field‐effect devices reveals strong dependence on thickness and carrier density. Monolayer MoS2 exhibits the highest magnetoresistance of 680%. A combination of density functional theory and Boltzmann transport equation simulations shows that band transport is not causing the magnetic behavior,
Anoir Hamdi, Dominik Dettmann, Andrés Rafael Botello‐Méndez, Atiye Pezeshki, Lilian Skokan, Andreas Ruediger, Gianluca Fiori, Zeila Zanolli, Emanuele Orgiu   +8 more
wiley   +1 more source

Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few‐Layer CrPS₄

Advanced Physics Research
Abstract2D van der Waals (vdW) magnets with layer‐dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in effectively manipulating the tunneling anisotropic magnetoresistance (TAMR) of 2D vdW magnet‐based magnetic tunnel junctions ...
ZhuangEn Fu, Hong‐Fei Huang, Piumi Samarawickrama, Kenji Watanabe, Takashi Taniguchi, Wenyong Wang, John Ackerman, Jiadong Zang, Jie‐Xiang Yu, Jifa Tian   +9 more
openaire   +3 more sources

Emerging single‐element ferroelectrics: From theory to experiment

InfoMat, Volume 8, Issue 4, April 2026.
This review explores recent developments in single‐element ferroelectrics, covering mechanisms of ferroelectric behavior, their crystal structures, key preparation methods, ferroelectric performance characteristics, and promising device applications in field‐effect transistors, photodetectors, and visual perceptrons.
Run Zhao, Yuhang Zhang, Chen‐Min Dai, Fan Li, Jinlei Zhang, Ju Gao, Yucheng Jiang, Cheng‐Wei Qiu   +7 more
wiley   +1 more source

Interfacial Atomic and Electronic Structures of LSM/YSZ Thin Films as Models for SOC Air Electrodes

ChemElectroChem, Volume 13, Issue 6, 17 March 2026.
Lanthanum–strontium manganite/yttria‐stabilized zirconia thin films serve as model systems for solid oxide cell electrodes, where high‐resolution scanning transmission electron microscopy and X‐ray photoelectron spectroscopy reveal atomistic interfacial features and electronic structure supported by atomistic modeling of these interfaces.
Hebatallah Ali, Patricia König, Xuan Quy Tran, Anton Kaus, Hanna Türk, Adnan Hammud, Zahra Gheisari, Vaibhav Vibhu, Vladimir Roddatis, Franz‐Philipp Schmidt, Raoul Blume, Patrick Zeller, Till Frömling, Felix Gunkel, Axel Knop‐Gericke, Karsten Reuter, Rüdiger‐A. Eichel, Christoph Scheurer, Thomas Lunkenbein   +18 more
wiley   +1 more source

Spin-torque quantization and microwave sensitivity of a nano-sized spin diode

EPJ Web of Conferences, 2018
Rectification of microwave signal by the spin-torque diode is very promising for its practical applications in microwave imaging. This is due to a very high sensitivity of magnetic tunnel junction under the bias current, which was previously demonstrated
Demin Gleb, Popkov Anatoly
doaj   +1 more source

Enhancement of magnetic field sensitivity by spin-transfer torque in in-plane magnetized superparamagnetic tunnel junctions

Applied Physics Express
We measured the magnetic field dependence of superparamagnetic tunnel junctions (SMTJs) with in-plane magnetization and a diameter of 100 nm. A threefold enhancement in the slope of the probability curve was observed under the application of large ...
Ryunosuke Hirama, Takahide Kubota, Motoki Endo, Kosuke Fujiwara, Satoshi Sasaki, Yutaka Higo, Lui Sakai, Masanori Hosomi, M. Oogane   +8 more
doaj   +1 more source

Half-metallic Heusler alloy/AlP based magnetic tunnel junction

AIP Advances
Exploring the spin transport characteristics of magnetic tunnel junctions based on half-metallic Heusler holds significance, not only in unraveling the fundamental physics at play but also in advancing applications of spintronic devices.
Kaifang Qu, Qiyun Xie, Wei Wang
doaj   +1 more source

Room‐temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

InfoMat
The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The
Haiyang Pan, Anil Kumar Singh, Chusheng Zhang, Xueqi Hu, Jiayu Shi, Liheng An, Naizhou Wang, Ruihuan Duan, Zheng Liu, Stuart S. P. Parkin, Pritam Deb, Weibo Gao   +11 more
doaj   +1 more source

Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication. [PDF]

Sci Rep, 2019
Kowalska E, Fukushima A, Sluka V, Fowley C, Kákay A, Aleksandrov Y, Lindner J, Fassbender J, Yuasa S, Deac AM.   +9 more
europepmc   +1 more source