Results 141 to 150 of about 1,297 (189)

A High-Sensitivity, Low-Noise, and Low-Hysteresis Tunneling Magnetoresistance Sensor Based on Structural Optimization of Magnetic Tunnel Junctions. [PDF]

Sensors (Basel)
Bi R, Chen R, Wu S, Ma H, Zhang H, Liu X, He J, Hu J.   +7 more
europepmc   +1 more source

Exploring Eco-Sustainability in Functionally Unconventional Magnetic Field Sensors. [PDF]

Nano Lett
Xu R, Makarov D.
europepmc   +1 more source

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Tunneling Magnetoresistance on the Subnanometer Scale

Physical Review Letters, 2007
The influence of the finite thickness and structure, amorphous or crystalline, of Fe electrodes on the tunneling magnetoresistance (TMR) ratio is investigated by ab initio calculations in Fe/MgO/Fe tunnel junctions. An amorphous Fe layer in direct contact with the MgO barrier causes a low TMR ratio of only 44%.
Heiliger, Christian, Gradhand, Martin, Zahn, Peter, Mertig, Ingrid   +3 more
openaire   +3 more sources

TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS

International Journal of Modern Physics B, 2004
Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which ...
Tao, Y. C., Hu, J. G.
openaire   +1 more source

Tunnelling Magnetoresistance (TMR)

2021
In the chapter, we have introduced the concept of tunneling magnetoresistance, magnetic tunnel junction (MTJ), and magnetic junctions. A detailed physical explanation behind the phenomenon has also been presented. In this context, quantum mechanical tunneling of conduction electrons, which is at the origin of this phenomenon, has been discussed in the ...
Puja Dey, Jitendra Nath Roy
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Analytical investigations of tunnel magnetoresistance layers

Analytical and Bioanalytical Chemistry, 2004
The basic elements of tunnel magnetoresists are two magnetic layers separated by an insulating barrier layer. The uniformity of this only 1-2 nm thick barrier layer up to dot edges and the chemical composition of the layers are properties important for the efficiency of tunnel magnetoresistance devices.
Jürgen, Thomas, Rainer, Reiche, Hartmut, Vinzelberg   +2 more
openaire   +2 more sources

Tunnel magnetoresistance in polyaniline

Synthetic Metals, 2018
Abstract The single-molecule electric current in polyaniline was investigated by first-principles calculation with a focus on tunnel magnetoresistance (TMR). The electric current in an aniline oligomer contacting two ferromagnetic electrodes was calculated by alternating the relative magnetic direction of the electrodes from parallel to antiparallel ...
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Spatially Modulated Tunnel Magnetoresistance on the Nanoscale

Physical Review Letters, 2011
We investigate the local tunnel magnetoresistance (TMR) effect within a single Co nanoisland using spin-polarized scanning tunneling microscopy. We observe a clear spatial modulation of the TMR ratio with an amplitude of ~20% and a spacing of ~1.3 nm between maxima and minima around the Fermi level.
Oka, Hirofumi, Tao, Kun, Wedekind, Sebastian, Rodary, Guillemin, Stepanyuk, Valeri, Sander, Dirk, Kirschner, Jürgen   +6 more
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Tunnel Magnetoresistance Effect

2012
First, both roots of tunnel effect in physics and magnetoresistance are described and then the birth of the term “tunnel magnetoresistance (TMR)” combining tunnel and magnetoresistance is explained. Then, the phenomenological theory of TMR based on Julliere is shown and the comparison among TMR, GMR, and Planner Hall Effect (PHE) is made.
Hanmin Jin, Terunobu Miyazaki
openaire   +1 more source