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Temperature dependence of the tunneling magnetoresistance for tunnel junctions
Journal of Magnetism and Magnetic Materials, 2002Abstract The temperature dependence of the tunneling magnetoresistance (TMR) for magnetic tunneling junctions is investigated experimentally before and after the sample is annealed. As grown, the TMR is observed to increase with temperature from 80 to 160 K.
J.H. Lee +7 more
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Ballistic transport and tunnelling magnetoresistance in tunnel junctions
Journal of Physics: Condensed Matter, 2002In this paper we report the results of a theoretical study of the ballistic tunnelling of electrons in magnetic tunnel junctions. We show how first-principles band-structure calculations and published magnetization data can be used as inputs to the model, which is then used to predict the magnetoresistance of a tunnel junction. This approach provides a
A H Davis, J M MacLaren
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Theory of Tunneling Magnetoresistance
2001Rigorous theory of the tunneling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is decribed. It is applied to calculate the TMR of two Co electrodes separated by a vacuum gap.
J. Mathon, A. Umerski
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Tunnel magnetoresistance of diamondoids
Chemical Physics Letters, 2016Abstract Tunnel magnetoresistance (TMR) of diamondoids has been predicted by first principles density functional theory. Diamantane was used as a basic molecular proxy for diamondoids because hydrogen atoms in the apical position are easily substituted for a thiol group.
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Tunneling magnetoresistance with amorphous electrodes
Physical Review B, 2008A detailed first-principles analysis of the transport properties of different magnetic electrode materials for $\mathrm{MgO}$ tunnel junctions is performed to elucidate the microscopic origin of the tunneling magnetoresistance (TMR) effect. The spin-dependent transport properties of the magnetic materials are analyzed separately from the particular ...
Gradhand, Martin +3 more
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Models for magnetoresistance in tunnel junctions
The European Physical Journal B, 1999We show there are putative pitfalls when one predicts the magnetoresistance of magnetic tunnel junctions (JMR) based on different toy models. Amongst them are the sensitivity of the MR to the details of the profile of the potential barrier between the metallic electrodes and the insulating barrier, and the common assumption of only one band of ...
S. Zhang, P.M. Levy
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Spin-tunneling magnetoresistive sensors
Sensors and Actuators A: Physical, 2000Abstract Magnetic sensors based on spin-dependent tunneling (SDT) have been theoretically simulated, fabricated, and experimentally tested. In particular, SDT sensors that possess even and odd input–output characteristics have been introduced, designed, and studied.
S.I Kasatkin +8 more
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Tunneling magnetoresistance in granular composites
Journal of Applied Physics, 2002The temperature dependence of magnetoresistance in insulating granular systems is studied. At low temperatures the magnetoresistance is enhanced drastically as a result of high-order tunneling. On the other hand, decay of spin polarization will lead to a decrease of magnetoresistance at high temperatures.
Sheng Ju, Zhen-Ya Li
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Tunneling magnetoresistance in antiferromagnetic magnetic tunnel junctions
Journal of Physics D: Applied PhysicsAbstract Magnetic random-access memory (MRAM) offers significant advantages in non-volatility, low power consumption, and high endurance and fast switching speed, making it an attractive solution for memory applications. The core structure, magnetic tunnel junctions (MTJs), has been successfully established in MRAM with high tunneling
Jiakai Yang +14 more
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